Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Jun Fukuda

Hirohisa Matsuki

A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Semiconductor device and manufacturing method thereof

A semiconductor device test board for performing a test on a semiconductor device includes a supporting board formed of an insulating material and contact parts which are formed on the supporting board, and which can be connected to solder bumps formed on a semiconductor device to be tested. Each of the contact parts includes contact base layers formed of conductive materials other than solder and a solder layer having a thin-film shape, and covering the contact base layers.

Growing community of inventors

Kawasaki, Japan

Jun Fukuda