Other

Plasma-therm, Inc.

Altatech Semiconductor

Kobus Sas

Kobus

Julien Vitiello

Fabien Piallat

Christophe Borean

Jean-Luc Delcarri

Patrice Nal

A method for depositing a layer of a material onto a substrate, comprising: one gas-phase injection of a first chemical species with a precursor of such insulating material, into a deposition chamber of a chemical vapor deposition reactor, through a first injection path, according to a first pulse sequence; one gas-phase injection of a second chemical species with a reactant adapted to react with such precursor, into the deposition chamber, through a second injection path, according to a second pulse sequence which is phase-shifted relative to the first pulse sequence; one sequential generation of a plasma of the first chemical species and/or the second chemical species during at least one pulse of at least one of the first and second sequences, with such plasma being generated from a high frequency (HF) plasma source and a low frequency (LF) plasma source applied to the first and second injection paths, the low frequency (LF) plasma source power on the high frequency (HF) plasma source power ratio being above 1.

Method for depositing an insulating material into a via

The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (), said method successively comprising: (a) the deposition of a layer () of titanium nitride or tantalum nitride on a main surface (A) of the substrate and on the inner surface (A,B) of at least one hole () extending into at least part of the thickness of said substrate; (b) the deposition of a layer () of copper on said layer () of titanium nitride or tantalum nitride; and (c) the filling of the hole () with copper, said method being characterized in that, during step (a), the substrate () is arranged in a first deposition chamber (), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.

Method for producing an interconnection comprising a via extending through a substrate

The invention relates to a method for removing a metal deposit () arranged on a surface () in a chamber (), said method including repeatedly performing a sequence including: a) a first phase of injecting chemical species suitable for oxidizing said metal deposit (); and b) a second phase of injecting chemical species suitable for volatilizing the oxidized metal deposit, said second phase b) being performed after the first phase a).

Method for removing a metal deposit arranged on a surface in a chamber

A method for removing a metallic deposit disposed on a surface in a chamber, including the following steps:

Method for removing a metal deposit placed on a surface in a chamber

A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to the reaction chamber via a circumferential opening in the inner wall of the chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. The inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example, fins.

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Grenoble, France

Julien Vitiello