Taiwan Semiconductor Manufacturing Comp. Ltd.

Jui Fu Chueh

Kuo-Feng Yu

Jian-Hao Chen

Hui-Chi Chen

Ming-Chi Huang

Yung-Hsiang Chan

An-Hung Tai

Yen-Ta Lin

Cheng-Chieh Tu

In a method of manufacturing a semiconductor device, a gate space is formed by removing a sacrificial gate electrode formed over a channel region, a first gate dielectric layer is formed over the channel region in the gate space, a second gate dielectric layer is formed over the first gate dielectric layer, one or more conductive layers is formed on the second gate dielectric layer, the second gate dielectric layer and the one or more conductive layers are recessed, an annealing operation is performed to diffuse an element of the second gate dielectric layer into the first gate dielectric layer, and one or more metal layers are formed in the gate space.

Method of manufacturing semiconductor devices and semiconductor devices

Growing community of inventors

Taipei, Taiwan

Jui Fu Chueh