Taiwan Semiconductor Manufacturing Comp. Ltd.

Jui-Feng Kuan

Yi-Kan Cheng

Hui Yu Lee

Chi-Wen Chang

Wei-Yi Hu

Hui-Yu Lee

Yu-Hao Chen

Ching-Shun Yang

Chien-Te Wu

Tsun-Yu Yang

Ya Yun Liu

Chin-Sheng Chen

Chin-Cheng Kuo

Feng Wei Kuo

Chin-Shen Lin

Yu-Tseng Hsien

Wen-Shen Chou

Wei Min Chan

Ke-Ying Su

Tao Wen Chung

Hsiao-Shu Chao

Chung-Ming Weng

Chung-Hsing Wang

Chin-Hua Wen

Ching-Yu Chai

Ren-Hong Fu

Kmin Hsu

Simon Yi-Hung Chen

Hung-Yi Kuo

Shuo-Mao Chen

Tsung-Yuan Yu

Kuo-Ji Chen

Wen-Ju Preet Yang

Huang-Yu Chen

Hung-Ming Chen

Chih-Ping Chao

Chih-Hsien Lin

Hsien-Hsin Sean Lee

Cheng-Hung Yeh

Yu-Ren Chen

Hung-Wen Huang

Sung-Hsiung Wang

Jian-Yi Li

Heng-Ming Hsu

Chih Chi Hsiao

Po-Cheng Pan

Jill Liu

Abhishek Patyal

Wei-Yu Hu

A method is disclosed herein. The method includes: providing, by an electronic design automation (EDA), a trigger signal to an application programming interface (API); providing, by the API, first parameters associated with parameterized cells in a netlist of an integrated circuit (IC); adjusting, by the API, the first parameters to generate second parameters associated with the parameterized cells in the netlist of the IC; updating, by the API, the netlist of the IC according to the second parameters; and performing, by the EDA, a simulation according to the netlist.

Method for integrated circuit design

A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.

Methods for making semiconductor-based integrated circuits

Disclosed are apparatus and methods for a silicon photonic (SiPh) structure comprising the integration of an electrical integrated circuit (EIC); a photonic integrated circuit (PIC) disposed on top of the EIC; two or more polymer waveguides (PWGs) disposed on top of the PIC and formed by layers of cladding polymer and core polymer; and an integration fan-out redistribution (InFO RDL) layer disposed on top of the two or more PWGs. The operation of PWGs is based on the refractive indexes of the cladding and core polymers. Inter-layer optical signals coupling is provided by edge-coupling, reflective prisms and grating coupling. A wafer-level system implements a SiPh structure die and provides inter-die signal optical interconnections among the PWGs.

Structures and process flow for integrated photonic-electric ic package by using polymer waveguide

A semiconductor structure includes, an optical component and a thermal control mechanism. The optical component includes a first main path that splits into a first side path and a second side path so that the first side path and the second side path are separated from one another. The thermal control mechanism configured to control a temperature of both the first side path and the second side path, wherein the first thermal control mechanism includes a first thermoelectric member and a second thermoelectric member that are positioned between the first side path and the second side path and the first thermoelectric member and the second thermoelectric member have opposite conductive types.

Semiconductor structure

A semiconductor structure includes an optical component and a thermal control mechanism adjacent to the optical component and configured to control a temperature of the optical component. The thermal control mechanism includes a conductive structure, a first thermoelectric member and a second thermoelectric member opposite to the first thermoelectric member. The first thermoelectric member and the second thermoelectric member are electrically connected to the conductive structure. The first thermoelectric member and the second thermoelectric member have opposite conductive types. The semiconductor structure further includes a first dielectric layer surrounding the optical component and a portion of the thermal control mechanism, wherein the conductive structure is over the first dielectric layer, and the first thermoelectric member and the second thermoelectric member are surrounded by the first dielectric layer. The semiconductor structure further includes a first via extending through the first dielectric layer and electrically connected to the conductive structure.

Semiconductor structure and method of manufacturing a semiconductor structure

An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

Directionally tunable optical reflector

A semiconductor device includes a substrate. The semiconductor device further includes a waveguide on a first side of the substrate. The semiconductor device further includes a photodetector (PD) on a second side of the substrate, opposite the first side of the substrate. The semiconductor device further includes an optical through via (OTV) optically connecting the PD with the waveguide, wherein the OTV extends through the substrate from the first side of the substrate to the second side of the substrate.

Semiconductor device including optical through via and method of making

Structures and process flow for integrated photonic-electric IC package by using polymer waveguide

A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.

Structure and method for cooling three-dimensional integrated circuits

A method includes assigning a default voltage value to a net in an integrated circuit (IC) schematic, generating a simulation voltage value of the net by performing a circuit simulation on the net using the assigned default voltage value, and modifying the IC schematic to include a voltage value associated with the net. The voltage value associated with the net and included in the modified IC schematic is based on a comparison between the assigned default voltage value and the simulation voltage value of the net.

Integrated circuit design method, system and computer program product

A method is disclosed herein. The method includes: adjusting first parameters associated with parameterized cells in a netlist of an integrated circuit (IC) to generate second parameters associated with the parameterized cells in the netlist of the IC; updating the netlist of the IC according to the second parameters; and performing a simulation according to the netlist.

Method and non-transitory computer readable medium of operating an electronic design automation platform for an optimal intgrated circuit design

A method of making a semiconductor device includes receiving a first layout of a device in a first technology node, wherein the first layout comprises a plurality of first conductive patterns spaced along a first direction and a plurality of first interconnect patterns connecting at least two of the plurality of first conductive patterns. The method includes identifying a plurality of second conductive patterns from the plurality of first conductive patterns according to a second technology node different from the first technology node. The method includes determining a scaling factor for the first layout in the first direction based on the plurality of first conductive patterns and the plurality of second conductive patterns. The method includes adjusting the plurality of first interconnect patterns along the first direction using the scaling factor to determine a plurality of second interconnect patterns connecting at least two of the plurality of second conductive patterns.

Region based shrinking methodology for integrated circuit layout migration

The present disclosure relates to a method of performing electromigration sign-off. The method includes determining a change in temperature due to joule heating from an RMS current of a first interconnect. The change in temperature due to joule heating is added to a change in temperature due to device self-heating to determine a first change in real temperature. A first average current limit is determined for the first interconnect using the first change in real temperature. A first average current on the first interconnect is compared to the first average current limit to determine if a first electromigration violation is present on the first interconnect. A second average current is determined for a second interconnect using a second change in real temperature. The second average current is compared to a second average current limit to determine if a second electromigration violation is present on the second interconnect.

Electromigration sign-off tool

Growing community of inventors

Zhubei, Taiwan

Jui-Feng Kuan