Taiwan Semiconductor Manufacturing Comp. Ltd.

Jui-Chuan Chang

Shao-Yen Ku

Wen-Chang Tsai

Shang-Yuan Yu

Chien-Wen Hsiao

Fan-Yi Hsu

Yung-Li Tsai

Hsiao Chien-Wen

Shao-Fu Hsu

Yuan-Chih Chiang

Hsieh-Ching Wei

Yuan Chih Chiang

Hong-Jie Xu

Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Photoresist removal

A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.

Apparatus and method of removing photoresist layer

A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.

Semiconductor apparatus and method of removing photoresist layer on substrate

A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.

Method of etching and cleaning wafers

Embodiments that relate to mechanisms for cleaning wafers is provided. A method for wafer cleaning includes cleaning wafers by a wet-bench cleaning operation. The method also includes thereafter cleaning each of the wafers by a single-wafer cleaning operation. In addition, a cleaning apparatus for enhancing the performance of the above method is also provided.

Mechanisms for wafer cleaning

A loading port includes a housing and a plurality of stations defined in the housing configured to receive a front opening universal pod (FOUP). The loading port further includes a connector configured to receive an inert gas. At least one of the plurality of stations is configured to deliver the inert gas to the FOUP to purge an interior of the FOUP of moisture. A system including the loading port and a method of using the system are also described.

Growing community of inventors

Hsinchu, Taiwan

Jui-Chuan Chang