Shanghai Huali Integrated Circuit Corporation

Jueyang Liu

Zhanyuan Hu

Huojin Tu

Qin Deng

The disclosure provides a manufacturing method for a fin field-effect transistor. The method to make the fin field-effect transistor comprises: forming a fin structure and a gate structure spanning on the fin structure on a substrate; and forming a source-drain region on the fin structure, which comprises: forming an epitaxial layer; and forming a sacrificial layer on the surface of the epitaxial layer to prevent the epitaxial layer from being lost in the subsequent removal steps.

Manufacturing method of Fin field-effect transistor

An epitaxial growth process for a semiconductor device includes providing a semiconductor substrate, forming a plurality of Dummy Gate structures on the surface of the semiconductor substrate, and forming grooves in a self-aligned manner on both sides of the Dummy Gate structures; forming an initial seed layer on the inner side surfaces of the grooves, the thickness of the formed initial seed layer on the bottoms of the grooves being greater and the thickness of the formed initial seed layer on the sidewalls being smaller since the growth speed of crystal faces &#x3c;100&#x3e; and &#x3c;110&#x3e; is different; longitudinally etching the initial seed layer to thin the bottom of the initial seed layer to form a seed layer; forming a main body layer on the seed layer, the main body layer filling the grooves; and forming a cover layer on the main body layer.

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Shanghai, China

Jueyang Liu