United Microelectronics Corp.

Other

Juen-Kuen Lin

Chien-Hsin Lai

Peng-Yih Peng

Kun-Lin Wu

Hao-Kuang Chiu

Juan-Yuan Wu

Fu-Yang Yu

Chih-Chiang Yang

Daniel Chiu

Chia-Jui Chang

Kevin Yu

Huang-Yi Lin

Yung-Tsung Wei

Jung-Nan Tseng

Tzu-Shin Chen

Huang-Yi Li

Edward Yang

Polishing slurry is transported via piping to flow into the closed loop control system. First, the polishing slurry flows into the ultrasonic concentration detector. Original data of the polishing slurry that is determined by means of ultrasonic concentration detector is a fluid velocity at that time. This determined value can be converted into weight percent concentration at that time by memory data table. The converted data of weight percent concentration will be transmitted into program logic controller (PLC), and the data of liquid level volume in the distribution tank will be transmitted into program logic controller at present. The program logic controller will then analyze whether the quantity of oxidant is sufficient. If the quantity of oxidant does not reach the required criterion, the program logic controller will control the analog valve to transmit a supplementary quantity of oxidant into the distribution tank via the analog valve and piping.

Closed loop concentration control system for chemical mechanical polishing slurry

A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Carrier head for chemical mechanical polishing

An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N gas and He-dilute gas in order to prevent TDMAT, Ti&lsqb;N(CH ) &rsqb; , from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.

Auxiliary gasline-heating unit in chemical vapor deposition

The present invention relates to improved chemical mechanical polishing apparatus, which reduce air sharp pressure on the polish head for preventing the breakage unpolished wafer. The improved chemical mechanical polishing apparatus of present invention is composed of a wafer head, a polish head, a damper and a sensor. The flowing speed of gas is reduced by making the diameter of the gas line connected to the damper air inlet smaller than the diameter of the gas line connected to the damper air outlet. The initial air sharp pressure is reduced and make &Dgr;P&equals;P &minus;P <0, by adding an air temporary storage machine in between the inlet and the outlet. Besides, putting a sensor on the air lines under the air temporary storage machine, when slurry flows in the air line owing to the breaking of slurry diaphragm, the sensor will send a signal to a control system of the improved apparatus of chemical mechanical polishing, and make the related parts stop operating automatically to avoid breaking.

Chemical mechanical polishing apparatus

An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N,gas and He-dilute gas in order to prevent TDMAT, Ti&lsqb;N(CH,),&rsqb;,, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.

A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Chemical-mechanical polish machines and fabrication process using the same

Chemical mechanical polish machines and fabrication process using the same

A method to maintain a consistent thin film thickness deposited by chemical vapor deposition is described in which method a compensative coefficient K is provided. The initial preset deposition time T,is multiplied by the compensative coefficient K to obtain an actual deposition time T, where T&equals;K&times;T,. Using the actual deposition time T to conduct the deposition, the expected thickness of the thin film is obtained.

Method to maintain consistent thickness of thin film deposited by chemical vapor deposition

A wafer polishing head for planarizing a wafer. The wafer polishing head comprises a carrier, a retaining ring, a first pressure chamber, a second pressure chamber and an automatic control system. The retaining ring is surrounding the carrier. The first pressure chamber having a first inner pressure is disposed above the retaining ring. The second pressure chamber having a second inner pressure is disposed on the carrier. The automatic control system is respectively coupled to the first pressure chamber and the second pressure chamber.

Wafer polishing head

A method for increasing the working life of retaining rings in a chemical-mechanical polishing machine. The method includes adding an extra pad between a retaining ring and a carrier so that the retaining ring is prevented from slippage and pressure on wafer can be evenly spread over the polishing pad of a polishing machine. Therefore, the rate at which a retaining ring wears out in chemical-mechanical polishing operation can be greatly reduced, and the working life of a retaining ring can be doubled.

Method for increasing working life of retaining ring in chemical-mechanical polishing machine

The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source flow and vortex flow, and the streamline grooves of polishing pad uniformly distribute the slurry on the polishing pad. An angle and a depth of the streamline groove, which are calculated by boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.

Chemical-mechanical polishing pad

An auto brush pressure cleaning system is described. The system includes a first pneumatic brush, a second pneumatic brush disposed to align with the first pneumatic brush adjacent and parallel to the first pneumatic brush, and a computer. The system also includes a first brush pressure regulator electrically coupled to the computer and transmitting a first and a second signal to the computer and a second brush pressure regulator coupled to the second pneumatic brush and the first brush pressure regulator through a first three-way valve and electrically coupled to the computer, wherein the second pneumatic brush transmits a third signal to the second brush pressure regulator and to the first brush pressure regulator and the second brush pressure regulator transmits a fourth signal to the computer. The system further includes a first electro-pressure regulator coupled to the first brush pressure regulator and the first pneumatic brush through a second three-way valve, wherein the first brush pressure regulator receives a fifth signal from the first pneumatic brush and a second electro-pressure regulator coupled to the second pneumatic brush and electrically coupled to the first electro-pressure regulator and the computer, wherein the computer transmits a sixth signal to the second and the first electro-pressure regulators.

Cleaning system with automatically controlled brush pressure

A CMP machine includes several polishing tables mounted on a carousel, which rotates in one direction. Each of the polishing tables includes a polishing pad. Each polishing pad can polish one wafer on its first surface. Each polishing pad also has one distributing duct used to supply slurry onto the polishing pad. An exhaust duct is included to exhaust slurry, in which the exhaust duct has a first end and a second end. The first end of the exhaust duct is coupled to slurry. A regulating valve is included to regulate slurry exhaust. An exhaust pump is included to produce a exhausting force of slurry. The exhaust pump is coupled to the second end of the exhaust duct. A regulating valve controller is included to control the regulating valve.

Growing community of inventors

Kaohsiung, Taiwan

Juen-Kuen Lin