International Business Machines Corporation

Judith A Coffin

Yun Yu Wang

Anthony Gene Domenicucci

Kenneth John Giewont

Russell Herbert Arndt

Michael Joseph MacDonald

Guillermo Prada-Silva

Craig M Ransom

Brian E Johnson

Lorraine P McDonnell Bushnell

A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.

Method for improved fabrication of salicide structures

Microreflectance infrared (IR) spectroscopy is used to determine the degree of cure of Meta-Paete (pyromellitic dianhydride-oxydianiline ethyl ester) films on metallized substrates. In this method, the infrared bands at 1028 and 1015 cm.sup.-1 are used to indirectly monitor ethanol evolution during Meta-Paete cure. The 1015 cm.sup.-1 band serves as internal reference, while the 1028 cm.sup.-1 band, which corresponds to the C--O stretch in the ethoxy group, is used to monitor imidization through loss of the ethoxy group during cure. Quantification of ethanol evolution is possible, since no apparent distortion is observed in the external reflection spectra at these two frequencies. The method can also be applied to measure the cure uniformity of Meta-Paete films, to provide an estimate of film thickness over metallized substrates, and to monitor temperature uniformity in an oven cavity.

Method to monitor Meta-Paete cure on metallized substrates

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Pleasant Valley, NY, United States of America

Judith A Coffin