Honeywell International Inc.

Alliedsignal Inc.

Caliper Life Sciences, Inc.

Jude A Dunne

Joseph T Kennedy

Lisa K Figge

Brian J Daniels

Shi-Qing Wang

Irina G Kazakova

Raphaele Gerber

Roger Dettloff

Coleen Hacker

Esther Huang

Thi Ngoc Vy Trinh

A method of forming a microelectronic device while preventing photoresist poisoning. Various layers of conductive metals and dielectric materials are deposited onto a substrate in selective sequence to form an integrated circuit. Vias and trenches are formed throughout the structure by exposing and patterning a photoresist material. The dielectric materials of the insulating layers are protected from the photoresist to prevent chemical reactions which lead to photoresist poisoning. This is done by forming a modified surface layer on the dielectric material by either depositing an additional layer that covers the dielectric material, or by modifying the exposed surface of the dielectric material to a plasma or chemical treatment.

Method for eliminating reaction between photoresist and OSG

The invention relates to cured dielectric films and a process for their manufacture which are useful in the production of integrated circuits. Dual layered dielectric films are produced in which a lower layer comprises a non-silicon containing organic polymer and an upper layer comprises an organic, silicon containing polymer. Such films are useful in the manufacture of microelectronic devices such as integrated circuits (IC's). In one aspect the upper layer silicon containing polymer has less than 40 Mole percent carbon containing substituents, and in another aspect it has at least approximately 40 Mole percent carbon containing substituents.

Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices

The invention provides a process for monitoring the quality of via or trench formation in the production of a semiconductor device. More particularly, the invention pertains to a process for detecting side wall oxidation of low dielectric constant materials during the formation of vias or trenches in dielectrics. At least one via and/or trench is cleaved and contacted with a solvent to remove partially oxidized portions of dielectrics on the side walls, enabling defects to be visually inspected.

Method for determining side wall oxidation of low-k materials

Growing community of inventors

Menlo Park, CA, United States of America

Jude A Dunne