Intel Corporation

Advanced Technology Materials, Inc.

Juan E Dominguez

Adrien Lavoie

Harsono S Simka

John J Plombon

Joseph Han

Valery M Dubin

Hyoung Il Kim

Steven W Johnston

Mark L Doczy

Kevin O'Brien

Bryan Clark Hendrix

Florian Gstrein

Sergei V Koveshnikov

David Michael Thompson

Ernisse S Putna

John D Peck

Kyle Y Flanigan

Thomas H Baum

Chongying Xu

Jeffrey F Roeder

Tianniu Chen

Michael Scott Goldstein

David Walter Peters

Michael L McSwiney

Aaron A Budrevich

Bilal Khalaf

Mansour Moinpour

Gregory T Stauf

John G Meyers

Chin-Chang Cheng

The claimed invention is a device and method of use for remotely actuated drumming with traditionally foot-operated drum sets. It is capable of operation with existing drum kits and sets, and adds ability to actuate a drum beater using the hand, arm, or other appendage such as an amputee residual limb to actuate the drum pedal remotely. The device comprises a traditional drum pedal mounted upon a drum pedal base, extendable tubes including extension tubes and down tubes, hinge posts and hinges, T-fittings, connector tabs, and a dais. A dais or platform for actuating the device is removeably attached to the extendable tube. The hinged attachment at the drum pedal base allows the drum pedal base to move up and down, thereby moving the foot pedal mechanism and actuating a beater that strikes the drum surface, creating sound.

Remotely actuated drum pedal device and method

Semiconductor packages including active package substrates are described. In an example, the active package substrate includes an active die between a top substrate layer and a bottom substrate layer. The top substrate layer may include a via and the active die may include a die pad. An anisotropic conductive layer may be disposed between the via and the die pad to conduct electrical current unidirectionally between the via and the die pad. In an embodiment, the active die is a flash memory controller and a memory die is mounted on the top substrate layer and placed in electrical communication with the flash memory controller through the anisotropic conductive layer.

Active package substrate having anisotropic conductive layer

A high density die package configuration is shown for use on system boards. In one example, an apparatus includes a system board, a first package mounted to the system board, a second package mounted to the system board, and an interface package mounted between the first and the second package and coupled directly to the first package and to the second package through the respective first and second packages.

High density die package configuration on system boards

Disclosed is a die stack. The die stack may include a first plurality of dies and a second plurality of dies. Each of the plurality of dies may define a plurality of vias passing from a first side to a second side of the die. The plurality of dies may be stacked such that each of the plurality of vias in a first die are collinear with a respective via in a second die. At least one of the second plurality of dies may be wire bonded to at least one of the first plurality of dies.

Hybrid die stacking

A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge.

Surface charge enhanced atomic layer deposition of pure metallic films

Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.

Using unstable nitrides to form semiconductor structures

Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.

Tunable gate electrode work function material for transistor applications

Noble metal barrier layers are disclosed. In one aspect, an apparatus may include a substrate, a dielectric layer over the substrate, and an interconnect structure within the dielectric layer. The interconnect structure may have a bulk metal and a barrier layer. The barrier layer may be disposed between the bulk metal and the dielectric layer. The barrier layer may include one or more metals selected from iridium, platinum, palladium, rhodium, osmium, gold, silver, rhenium, ruthenium, tungsten, and nickel.

Noble metal barrier layers

Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).

Copper precursors for CVD/ALD/digital CVD of copper metal films

An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube.

Nanotube growth and device formation

A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.

Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill

Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.

Growing community of inventors

Hillsboro, OR, United States of America

Juan E Dominguez