Intel Corporation

Lam Research Corporation

Joseph R Breivogel

Christopher E Barns

Douglas W Young

Michael R Oliver

Anil K Pant

Matthew J Prince

Leopoldo D Yau

Samuel F Louke

Leon Volfovski

Rahul Jairath

Erik H Engdahl

Leo D Yau

Loren R Blanchard

Sam F Louke

Matthew J Price

Robert M Rivera

Konstantin Volodarski

A method and apparatus for polishing a thin film formed on a semiconductor substrate. A table covered with a polishing pad is orbited about an axis. Slurry is fed through a plurality of spaced-apart holes formed through the polishing pad to uniformly distribute slurry across the pad surface during polishing. A substrate is pressed face down against the orbiting pad's surface and rotated to facilitate, along with the slurry, the polishing of the thin film formed on the substrate.

Orbital motion chemical-mechanical polishing method and apparatus

A novel method and apparatus for uniformly polishing thin films formed on a semiconductor substrate. A substrate is placed face down on a moving polishing pad so that the thin film to be polished is placed in direct contact with the moving polishing pad. The substrate is forcibly pressed against the polishing pad with pneumatic or hydraulic pressure applied to the backside of the substrate during polishing. Additionally, a wear ring is placed on the polishing pad around and adjacent to the substrate and forcibly pressed onto the polishing pad with a downward pressure from a second source so that the wear ring is coplanar with the substrate in order to eliminate edge rounding effects.

Method and apparatus for chemical mechanical polishing

A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.

Control of chemical-mechanical polishing rate across a substrate surface

The present invention describes an apparatus and method for aligning a pad/belt on a roller for use in chemical mechanical polishing using linear planarization. The present invention comprises an alignment sensor that senses the alignment of the pad/belt. The present invention additionally comprises a tensioner that tensions the pad/belt on the roller. And, a controller that controls the alignment of the pad/belt on the roller by controlling the tensioner.

Method and apparatus for aligning and tensioning a pad/belt used in

A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed information from the sensors are processed in order to provide feedback for compensating the fluid dispensing when fluid platens are used and/or the downforce exerted by the wafer carrier.

Sensors for a linear polisher

Method and apparatus for chemical-mechanical polishing using pneumatic

Orbital motion chemical-mechanical polishing apparatus and method of

A method of polishing a thin film formed on a semiconductor substrate. In a method of the present invention a polishing pad is rotated. A substrate is pressed against the rotating polishing pad so that the thin film to be polished is placed in direct contact with the polishing pad. During polishing, the polishing pad is continually conditioned by forming a plurality of grooves into the polishing pad. The grooves are formed by a conditioning block having a substantially planar bottom surface with a plurality of groove generating points extending from the substantially planar surface of the conditioning block. The grooves are generated by sweeping and rotating the conditioning block between an outer radius and an inner radius of the polishing pad.

Method and apparatus for conditioning a semiconductor polishing pad

An improved apparatus for polishing a thin film formed on a semiconductor substrate includes a rotatable table covered with a polishing pad. The table and the pad are then rotated relative to the substrate which is pressed down against the pad surface during the polishing process. Means is provided for generating a plurality of grooves in the pad while substrates are being polished. The continually formed grooves help to facilitate the polishing process by channeling slurry between the substrate and the pad.

Polishing pad conditioning apparatus for wafer planarization process

An improved composite polishing pad includes a first layer of elastic material, a second, stiff layer and a third layer optimized for slurry transport. This third layer is the layer against which the wafer makes contact during the polishing process. The second layer is segmented into individual sections physically isolated from one another in the lateral dimension. Each segmented section is resilient across its width yet cushioned by the first layer in the vertical direction. The physical isolation of each section combined with the cushioning of the first layer of material create a sort of 'bedspring' effect which enables the pad to conform to longitudinal gradations across the wafer.

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Aloha, OR, United States of America

Joseph R Breivogel