Applied Materials, Inc.

Joseph Kava

Greg A Blackburn

Richard J McGovern

Yan Rozenzon

Michael G Furr

A plasma etch chamber includes a modified focus ring which is used in conjunction with chamber pressure throttling to eject contaminants in the focus ring away from the substrate just before the etching cycle is completed. Additionally, process gas is directed against the inner wall of the chamber to create a swirling flow of plasma within the chamber and thus disturb any contaminant-generating field adjacent the chamber wall. A process gas, or a non-reactive purge gas, may also be supplied from a diffuser atop the cathode, to direct a gas layer along the top and sides of the chamber to reduce contaminant build-up on the chamber surfaces.

Contaminant reduction improvements for plasma etch chambers

A domed dielectric extension is set atop a standard electrode in a bell jar shaped process chamber to decrease electrical interaction between the electrode and the process chamber and thereby decrease the stagnant plasma in the region between the electrode and the process chamber lid that promotes polymer deposition upon the inner surface of a process chamber lid. The extension, made of a process inert dielectric material such as polycarbonate, has an upper surface that is curved to conform to the shape of the inner surface of the process chamber lid and that is precisely spaced from the upper portion of the process chamber lid inner surface.

Domed extension for process chamber electrode

The invention is directed to a focus ring for surrounding a workpiece/surface substrate during plasma processing comprising a hollow annular assembly comprised of electrically insulating material and having a texturized surface. The texturized ring is preferably in the geometry of a generally cylindrical structure. The texturizing of the ring can be effected by any means of surface abrasion including bead blasting or chemical etching.

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San Jose, CA, United States of America

Joseph Kava