Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh

Josef Lang

Helene Prigge

In the chemo-mechanical polishing, in particular, of semiconductor wafers, he abrasion and the geometrical quality of the wafers decreases with increasing service life of the polishing cloth. This can be prevented by treating the polishing cloth in each case after the polishing operation in a manner such that a pressure field is impressed, essentially without mechanical stress, on the polishing cloth, which pressure field causes a treatment liquid to flow through the interior of the polishing cloth and in this process the residues produced during polishing are rendered mobile and removed. A baseplate placed transversely across the polishing cloth and having a flat working surface provided with exit openings for the treatment liquid is suitable for carrying out the process. In the treatment, the treatment liquid is forced beneath the baseplate into the moving polishing cloth so that the latter is gradually traversed by the zone through which flow takes place.

Process for treating polishing cloths used for semiconductor wafers

Semiconductor wafers, in particular, silicon wafers, with differently poled front and rear sides and high geometrical quality can be fabricated by double-sided polishing if the wafer surfaces are differently polarized during the polishing process. This can be achieved in a simple fashion, in that during polishing, an electric field is set up between the upper and lower polishing plates. This can be accomplished by providing the upper polishing plate between the plate surface and the polishing cloth with a thin conductive layer insulated with respect thereto, on which a voltage can be impressed, while both polishing plates are grounded to the frame.

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Burghausen, Germany

Josef Lang