International Business Machines Corporation

Jose L Cruz

Timothy Charles Krywanczyk

Cuc Kim Huynh

Douglas Keith Sturtevant

Rosemary A Previti-Kelly

Matthew T Tiersch

David Louis Walker

Brian Douglas Pfeifer

Amye L Wells

Patricia Schink

Steven James Messier

Chad R Binkerd

A CMP slurry for and method of polishing a semiconductor wafer during formation of metal interconnects are disclosed. The present invention utilizes a first slurry comprising a first oxidizer, preferably ferric nitrate, to remove the excess metal of the metal interconnect but which leaves the metal residues on the surface of the wafer. A second slurry comprising another oxidizer, preferably potassium iodate solution, having a greater affinity to both the metal residue and the liner material than the underlying dielectric is used to remove the metal residue and liner material with significantly reduced scratching of the underlying dielectric. The more robust metal interconnects formed utilizing the present invention is effective in lowering the overall resistance of a wafer, reducing the number of shorts, and provides greater protection of the underlying dielectric. Overpolishing of the wafer and its associated problems are avoided.

Method to prevent leaving residual metal in CMP process of metal interconnect

The present invention is a method and apparatus for CMP processing that reduces scratching of the insulating film and conductor lines of a wafer. More specifically, the method and apparatus introduce an aqueous solution to the polishing pad and wafer during various intervals of the polishing procedure.

Method and apparatus for multiphase chemical mechanical polishing

The present invention provides a method of preventing the build-up of polishing material within low areas of a substrate during polishing. Following the blanket deposition of a first layer, a selectively removable material is deposited over the first layer, wherein the selectively removable material fills the low areas. A surface of the substrate is polished removing the excess first layer and selectively removable material from the surface, leaving the first layer and selectively removable material within the low area. Following polishing, the selectively removable material is removed from the low areas prior to the deposition of a second layer.

Prevention of slurry build-up within wafer topography during polishing

A method and apparatus for polishing a semiconductor wafer using a polishing pad. Circumferential rings of alternating compressibility of hard and soft/sponge-like material are located in the polishing pad. The concentric rings may also be located off-center from the geometric center of the polishing pad.

Composite polish pad for CMP

Growing community of inventors

Essex Junction, VT, United States of America

Jose L Cruz