Asml Netherlands B.v.

Asml Holding N.v.

Asml Holdings N.v.

Joost Jeroen Ottens

Koen Jacobus Johannes Maria Zaal

Martinus Hendrikus Antonius Leenders

Nicolaas Rudolf Kemper

Nicolaas Ten Kate

Johannes Henricus Wilhelmus Jacobs

Jeroen Johannes Sophia Maria Mertens

Sjoerd Nicolaas Lambertus Donders

Erik Roelof Loopstra

Christiaan Alexander Hoogendam

Martinus Cornelis Maria Verhagen

Michel Riepen

Boris Menchtchikov

Frederik Eduard De Jong

Arie Jeffrey Den Boef

Frits Van Der Meulen

Hendricus Johannes Maria Meijer

Johannes Petrus Maria Smeulers

Johannes Catharinus Hubertus Mulkens

Bob Streefkerk

Hans Butler

Marcus Adrianus Van De Kerkhof

Joeri Lof

Helmar Van Santen

Alexander Straaijer

Klaus Simon

Timotheus Franciscus Sengers

Franciscus Johannes Joseph Janssen

Joannes Theodoor De Smit

Theodorus Petrus Maria Cadee

Mark Kroon

Erik Theodorus Maria Bijlaart

Herman Boom

Frank Van Schaik

Patricius Aloysius Jacobus Tinnemans

Aleksey Yurievich Kolesnychenko

Henrikus Herman Marie Cox

Marco Koert Stavenga

Sergei Shulepov

Roelof Aeilko Siebrand Ritsema

Tjarko Adriaan Rudolf Van Empel

Noud Jan Gilissen

Stoyan Nihtianov

Jan-Gerard Cornelis Van Der Toorn

Jacobus Johannus Leonardus Hendricus Verspay

Franciscus Johannes Herman Maria Teunissen

Herman Vogel

Johannes Anna Quaedackers

Antonius Johannus Van Der Net

Christianus Gerardus Maria De Mol

Stefan Philip Christiaan Belfroid

Richard Moerman

Edwin Cornelis Kadijk

Roelof Frederik De Graaf

Thibault Simon Mathieu Laurent

Marcel Beckers

Johan Gertrudis Cornelis Kunnen

Rene Theodorus Petrus Compen

Robbert Jan Voogd

Johannes Hubertus Josephina Moors

Engelbertus Antonius Fransiscus Van Der Pasch

Raymond Wilhelmus Louis Lafarre

Frank Staals

Harmen Klaas Van Der Schoot

Koen Steffens

Emiel Jozef Melanie Eussen

Marcus Martinus Petrus Adrianus Vermeulen

Takeshi Kaneko

Jeroen Pieter Starreveld

Maurits Van Der Schaar

Xuedong Liu

Kaustuve Bhattacharyya

Andre Bernardus Jeunink

Paul Christiaan Hinnen

Patrick Warnaar

Nitesh Pandey

Wilhelmus Josephus Box

Michael Kubis

Leon Martin Levasier

Willem Jurrianus Venema

Elliott Gerard McNamara

Martinus Agnes Willem Cuijpers

Levinus Pieter Bakker

Wim Tjibbo Tel

Daniel Nicholas Galburt

Stephen Roux

Frank Jeroen Pieter Schuurmans

Santiago E Del Puerto

Martijn Houben

Marinus Aart Van Den Brink

Wilhelmus Franciscus Johannes Simons

Andrew W McCullough

Erwin John Van Zwet

Jan Evert Van Der Werf

Marcel Nicolaas Jacobus Van Kervinck

Ralph Brinkhof

Gerbrand Van Der Zouw

Johannes Hubertus Antonius Van De Rijdt

Petrus Matthijs Henricus Vosters

Marcel Hendrikus Maria Beems

A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

Lithographic apparatus and method

An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein N is an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

System and method for scanning a sample using multi-beam inspection apparatus

Embodiments of a drain in a lithographic projection apparatus are described that have, for example, a feature which reduces inflow of gas into the drain during a period when no liquid is present in the drain. In one example, a passive liquid removal mechanism is provided such that the pressure of gas in the drain is equal to the ambient gas pressure and in another embodiment a flap is provided to close off a chamber during times when no liquid needs removing.

Lithographic apparatus and device manufacturing method

An immersion lithographic apparatus is disclosed in which at least a part of the liquid supply system (which provides liquid between the projection system and the substrate) is moveable in a plane substantially parallel to a top surface of the substrate during scanning. The part is moved to reduce the relative velocity between that part and the substrate so that the speed at which the substrate may be moved relative to the projection system may be increased.

A lithographic apparatus with a cover plate formed separately from a substrate table and means for stabilizing a temperature of the substrate table by controlling the temperature of the cover plate is disclosed. A lithographic apparatus with thermal insulation provided between a cover plate and a substrate table so that the cover plate acts as a thermal shield for the substrate table is disclosed. A lithographic apparatus comprising means to determine a substrate table distortion and improve position control of a substrate by reference to the substrate table distortion is disclosed.

An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein Nis an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets () formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship () between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P/P). Bias variations between the sub-targets of the pair are equal and opposite (P/P). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements () that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

Metrology method, patterning device, apparatus and computer program

A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and a heater.

Lithographic apparatus and device manufacturing method involving a heater

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Veldhoven, Netherlands

Joost Jeroen Ottens