Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Joon Seok Oh

Deyan Wang

Cheng-Bai Xu

Mingqi Li

Cong Liu

Emad Aqad

Shintaro Yamada

Clark H Cummins

Matthias Stefan Ober

Doris H Kang

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising base-reactive component and processes for photolithography

This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.

Base reactive photoacid generators and photoresists comprising same

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Natick, MA, United States of America

Joon Seok Oh