Samsung Electronics Co., Ltd.

Jongwoo Sun

Jeongil Mun

Jewoo Han

Kyohyeok Kim

Kyeonghun Kim

Hyung Joo Lee

Hyungjoo Lee

Taemin Earmme

Sejin Oh

Haejoong Park

Kwangnam Kim

Hyungjun Kim

Dougyong Sung

Hakyoung Kim

Jungpyo Hong

Sungyeon Kim

Eunwoo Lee

Sangrok Oh

Seeyub Yang

Taehwa Kim

Jaehyun Lee

Yongseok Lee

Jinyoung Park

Jihyun Lim

Yongwoo Lee

Sung-Ki Lee

Ilyoung Han

Dowon Kim

Yun-Kwang Jeon

Eunhee Jeang

Kangmin Jeon

Masayuki Tomoyasu

Youngjin Noh

Nohsung Kwak

Akira Koshiishi

Yunhwan Kim

Minkyu Sung

Seongha Jeong

Incheol Song

Masato Horiguchi

Iksu Byun

Kyoungchon Kim

Ungyo Jung

Hongmin Yoon

Taekyoon Park

Taeil Cho

Jungmo Sung

Kyoungsuk Kim

Kimoon Jung

Wonyoung Jee

A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.

Plasma processing apparatus and methods of manufacturing semiconductor device using the same

An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

Apparatus and method for plasma etching

A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.

Substrate treating apparatus and substrate treating system having the same

A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

Method and system for monitoring substrate processing apparatus

A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

Plasma processing apparatus and semiconductor device manufacturing method using the same

Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area.

Semiconductor processing equipment including electrostatic chuck for plasma processing

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

Method of forming plasma processing apparatus, related apparatus, and method of forming semiconductor device using the same

According to some embodiments, a semiconductor substrate processing apparatus includes a housing, a plasma source unit, an electrostatic chuck, and a ring unit. The housing encloses a process chamber. The plasma source unit is connected to the housing, and includes a shower head and a fixing ring positioned to support the shower head. The shower head includes an upper electrode mounted on the fixing ring, and includes injection holes passing through part of the upper electrode and configured to inject gas into the chamber. The electrostatic chuck is connected to the housing and includes a lower electrode, and is for mounting a semiconductor substrate thereon. The ring unit is mounted on an edge portion of the electrostatic chuck, and includes a focus ring and a cover ring surrounding the focus ring. One of the lower electrode and the upper electrode is connected to a high frequency power supply, and the other of the lower electrode and the upper electrode is connected to ground. The focus ring has an inner side surface, and an opposite outer side surface that contacts the cover ring, and a width between the inner side surface and the outer side surface of the focus ring is a first width. The cover ring has an inner side surface that contacts the outer side surface of the focus ring, and an outer side surface, and a width between the inner side surface and the outer side surface of the cover ring is a second width. The first width is between 2 and 10 time the second width.

Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same

A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.

Semiconductor manufacturing apparatus

A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

An etching apparatus includes a reaction chamber having an internal space, a fixing chuck disposed in the reaction chamber, an electrostatic chuck disposed on the fixing chuck and on which a wafer is placed, a focus ring surrounding the electrostatic chuck, and a sensor device configured to be transferred into or out of the reaction chamber and placed on the electrostatic chuck. The sensor device includes a body having a plate shape, and a sensor disposed on an upper surface of the body which senses whether the focus ring is worn.

Sensor device and etching apparatus having the same

A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.

Gas supply assembly and substrate processing apparatus including the same

A substrate processing module includes a process chamber configured to perform a treatment process on a substrate; a transfer chamber provided on a first side of the process chamber, the substrate being transferred between the process chamber and the transfer chamber; an optical emission spectroscopy (OES) system provided on a second side of the process chamber and configured to monitor the process chamber; and a reference light source disposed in the transfer chamber and configured to emit a reference light to calibrate the OES system.

Substrate processing apparatus, substrate processing module, and semiconductor device fabrication method

An optical emission spectroscopy system may include a reference light source, an analyzer to receive and analyze light transmitted from the reference light source, and a calibrator to calibrate light emitted from the reference light source. The calibrator may change a calibration ratio in accordance with an incidence angle of the light.

Optical emission spectroscopy system, method of calibrating the same, and method of fabricating semiconductor device

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Hwaseong-si, South Korea

Jongwoo Sun