Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Jong-Woo Sun

Jung-Pyo Hong

Kwang-Nam Kim

Sang-Rok Oh

Jung-Mo Sung

Je-Woo Han

Jin-Young Park

Chan-Hoon Park

Jae-Hyun Lee

Jeongryul Kim

Sung-Wook Jung

Hyung-Joo Lee

Hae-Joong Park

Nam-Young Cho

Jeong-Il Mun

Min-Young Hur

Seung-Bo Shim

Kyo-Hyeok Kim

Seung-Yoon Song

Byeong-Hee Kim

Kyung-Hoon Lee

Dong-Kyu Kim

Sung-Wook Hwang

Chul-Ho Shin

Do-Haing Lee

Hyung-Jun Kim

Jong-Hwan An

Hyo-Sung Kim

Yong-Moon Jang

Sang-Dong Kwon

Eun-Woo Lee

Kyeong-Hun Kim

Ji-Soo Im

Ha-Dong Jin

Dong-Hyeon Na

Sung-Yeon Kim

Ja-Myung Gu

Jae-Woong Hwang

A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Plasma processing apparatus

In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus

A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

Loadlock module and semiconductor manufacturing apparatus including the same

A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

Method of controlling uniformity of plasma and plasma processing system

A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

Substrate support apparatus and plasma processing apparatus having the same

Provided is a plasma monitoring apparatus including an objective lens configured to collect light that is emitted from plasma and passes through an optical window of a chamber, a beam splitter configured to divide the light collected by the objective lens into first light and second light, a first optical system and a second optical system that are provided on a first optical path of the first light and a second optical path of the second light, respectively, the first optical system and the second optical system having different focal lengths such that focal points of the first optical system and the second optical system are set at different regions in the plasma, and a light detector configured to detect the first light that has passed through the first optical system and the second light that has passed through the second optical system.

Plasma monitoring apparatus and plasma processing system

A calibrator of an OES may include a cover, a reference light source and a controller. The cover may be detachably combined with a ceiling of a plasma chamber of a plasma processing apparatus. The reference light source may be installed at the cover to irradiate a reference light to the OES through an inner space of the plasma chamber. The controller may compare a spectrum of the reference light inputted into the OES with a spectrum of an actual light inputted into the OES during a plasma process in the plasma chamber to calibrate the OES. Thus, the OES may be calibrated without disassembling of the OES from the plasma chamber to decrease a time for calibrating the OES.

Calibrator of an optical emission spectroscopy

Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

Substrate processing apparatus

An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.

Apparatus and method for controlling ion beam

Growing community of inventors

Hwaseong-si, South Korea

Jong-Woo Sun