Samsung Electronics Co., Ltd.

Jong-Sun Ahn

Shin Hyoung Kim

Soo-Young Tak

One-Moon Chang

Jae-Phil Boo

Sang-Hoon Lee

In-seak Hwang

Joon Hyuk Kim

Kyoung-Moon Kang

Eun-Kuk Chung

Jong-Bok Kim

Yung-Jun Kim

Suk-Chul Bang

Woo-soon Jang

A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

Chemical mechanical polishing apparatus

A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.

Polishing pad for chemical mechanical polishing process and chemical mechanical polishing apparatus including the same

A chemical-mechanical polishing (CMP) apparatus for manufacturing a semiconductor device. The apparatus includes: a spin chuck for supporting and rotating a semiconductor wafer; a polisher comprising a polishing pad for planarizing a surface of the semiconductor wafer, the polisher moving along the surface of the semiconductor wafer by a polishing arm; and a polisher supporting device for supporting the polisher and maintaining the polisher in a horizontal state, while polishing an edge part of the surface of the semiconductor wafer, in order to improve polishing uniformity of a center part and the edge part of the semiconductor wafer. Accordingly, polishing uniformity of the center part and edge part of the semiconductor wafer may be improved, and a height of the polisher supporting device may be optimized according to a polishing degree. Also, the polisher may be easily supported, wear and tear of the support head may be minimized, and the support head may function as a conditioner.

Chemical-mechanical polishing apparatus for manufacturing semiconductor devices

Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.

Method of fabricating CMOS transistor that prevents gate thinning

Growing community of inventors

Hwaseong-si, South Korea

Jong-Sun Ahn