Sungkyunkwan University

Jong Sik Oh

Geun Young Yeom

Ki Hyun Kim

Ki Seok Kim

You Jin Ji

Doo San Kim

Jin Woo Park

Won Oh Lee

Da In Sung

Kyung Chae Yang

Ji Soo Oh

Yi Yeon Kim

Mu Kyeom Mun

Woong Sun Lim

Kyung Seok Min

An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.

Ion beam etching apparatus

This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

Method for etching atomic layer of graphene

Growing community of inventors

Suwon-si, South Korea

Jong Sik Oh