Cheil Industries Inc.

Samsung Sdi Co., Inc.

Ecopro Co. Ltd.

Cheil Industrial, Inc.

Panax Etec Co., Ltd.

Ukseung Chemical Co., Ltd.

Jong Seob Kim

Dong Seon Uh

Jin Kuk Lee

Chang Il Oh

Hui Chan Yun

Kyong Ho Yoon

Min Soo Kim

Do Hyeon Kim

Irina Nam

Kyung Hee Hyung

Jin Sung Kim

Hak Soo Kim

Mi Young Kim

Sang Kyun Kim

Hwan Sung Cheon

Sang Ran Koh

Hyun Hoo Sung

Young Ki Lee

Sang Jo Lim

Dong Hak Kwak

Jun Won Kang

Sang-Kyun Kim

Jin Ho Bae

Chang Soo Woo

Tu Won Chang

Chang Se Woo

Sun Yul Lee

Hyeon Cho

Sang Hak Lim

Jong Ho Jeon

Seung Bae Oh

Jee Yun Song

Jin Hee Bae

Dae Yun Kim

Yong Jin Chung

Ho Seok Yang

Young Gyu Kim

Kwang Sik Kim

Ky Hoon Ahn

A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6:  In Formula 6, R is methyl or ethyl, R' is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4&#x2266;x&#x2266;4, 0&#x2266;y&#x2266;3.6, and 4&#xd7;10&#x2266;z&#x2266;1, and n is from about 3 to about 500.

Hardmask composition and associated methods

A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1:{(SiO&#x2014;Y&#x2014;SiO)(RSiO)(XSiO)}(OH)(OR)&#x2003;&#x2003;(1).

Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same

A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3: 

Hardmask composition having antireflective properties and method of patterning material on substrate using the same

A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.

Compound for gap-filling of semiconductor device and coating composition using the same

A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4:[RO]Si&#x2014;[CH]&#x2014;Si[OR]&#x2003;&#x2003;(1)

Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same

A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A:(SiO&#x2014;Y&#x2014;SiO)(RSiO)&#x2003;&#x2003;(A)

An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.

Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer

A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: 

Polymer composition, hardmask composition having antireflective properties, and associated methods

A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formula 1, 2 and 3: 

Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same

A polymer for filling gaps in a semiconductor substrate and a composition using the polymer are provided. According to the composition, holes having a diameter of 100 nm or less and an aspect ratio (i.e. a ratio between the diameter and height of the holes) of 1 or higher in semiconductor substrates can be substantially completely filled by common spin coating without formation of defects, e.g., air voids, the film can be dissolved by an aqueous alkaline solution (i.e. a developing solution) until a desired thickness is reached, the film is highly resistant to isopropyl alcohol (IPA) and plasma etching after curing by baking, and residue can be rapidly removed from the inside of the holes by ashing.

Polymer for filling gaps in semiconductor substrate and coating composition using the same

Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1  Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Hardmask compositions for resist underlayer films

A cathode for lithium secondary batteries coated with a slurry including an active material, a binder and a solvent, and further including a polymerization inhibitor, is disclosed. Gelation of the slurry is prevented during production of the cathode so that adhesion of the slurry is enhanced, thus achieving improved coating properties of the cathode and facilitating the coating of the slurry.

Cathode for lithium secondary batteries having improved coating properties and lithium secondary batteries using the same

A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, Ris a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, Ris methylene or includes an aryl linking group, Ris a conjugated diene group, and Ris an unsaturated dienophile group.

Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer

An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C: In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and Ris methylene or includes a non-fluorene-containing aryl linking group.

Polymer having antireflective properties, hardmask composition including the same, process for forming a patterned material layer, and associated device

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Daejeon, South Korea

Jong Seob Kim