Samsung Electronics Co., Ltd.

Yonsei University

Jong-Ryun Choi

Won Seok Lee

Kwanyeob Chae

Jin-Ho Choi

Kwan-Yeob Chae

Kwan Yeob Chae

Ji Hun Oh

Alex Joo

Dong Hwan Lee

Ji-hun Oh

Sang-Hune Park

Yoonjee Nam

Shinyoung Yi

Su Ho Kim

Sanghoon Joo

Seong-Ook Jung

Kyungho Ryu

Seong Ook Jung

Sang-hoon Joo

Choong-Bin Lim

Heechai Kang

Suho Kim

Dae-ro Kim

Hee Chai Kang

Su-ho Kim

Dharmendra Pandit

Sang-Hoon Joo

Harmendra Panditd

Hoon-Koo Lee

Kyeong Ho Ryu

A digital measurement circuit includes a first input flip-flop which receives a first signal through a data input terminal, receives a first clock signal through a clock input terminal, and outputs a second signal; a second input flip-flop which receives the second signal through a data input terminal, receives a second clock signal, which is an inverted signal of the first clock signal, through a clock input terminal, and outputs a third signal; and a delay line which receives the second signal and outputs first through n-th output signals, wherein n is an integer greater than one, and the first through n-th output signals are sampled based on the third signal to output first through n-th sampling signals is provided.

Digital measurement circuit and memory system using the same

To design an integrated circuit, input data defining an integrated circuit are received, and a plurality of load standard cells having different delay characteristics are provided in a standard cell library. Placement and routing are performed based on the input data and the standard cell library and output data defining the integrated circuit are generated based on a result of the placement and the routing. Design efficiency and performance of the integrated circuit are enhanced by designing the integrated circuit with delay matching and duty ratio adjustment using the load standard cell.

Integrated circuit including load standard cell and method of designing the same

A semiconductor chip including a plurality of input/output units includes: a plurality of additional pads disposed on a surface of the semiconductor chip, wherein the plurality of additional pads include at least one of a first additional pad to which a ground voltage is applied and a second additional pad to which a power supply voltage is applied; and a plurality of pads disposed on the surface of the semiconductor chip, wherein the plurality of pads include at least one of a first pad to which the ground voltage is applied and a second pad to which the power supply voltage is applied, and further include a third pad through which a signal is input and/or output. The at least one of the first additional pad and the second additional pad is disposed on an input/output unit where the third pad is disposed, among the plurality of input/output units.

Semiconductor chip including a plurality of pads

A memory controller for receiving a differential data strobe signal and an application processor having the memory controller are disclosed. The memory controller includes a strobe signal receiver configured to receive first and second strobe signals from a memory device as differential data strobe signal and output a first detection signal based on a level of each of the first and second strobe signals, a comparator configured to receive the second strobe signal and a reference voltage and compare a level of the second strobe signal with a level of the reference voltage to output a second detection signal, and a gate signal generator configured to generate a gate signal masking a portion of a period corresponding to the differential data strobe signal using the first detection signal and the second detection signal.

Memory controller for receiving differential data strobe signals and application processor having the memory controller

An interface circuit may include a first FIFO circuit and a second FIFO circuit. The first FIFO circuit may generate first output data based on a first sampling signal and a second sampling signal. The second FIFO circuit may generate second output data based on a third sampling signal and a fourth sampling signal. The first FIFO circuit and the second FIFO circuit may be cross-reset.

Interface circuits configured to interface with multi-rank memory

A delay cell includes first through fifth inversion circuits. The first inversion circuit inverts an input signal, and an output electrode of the first inversion circuit is coupled to a first node. The second inversion circuit is turned on in response to a control signal, and inverts the input signal when turned on. An output electrode of the second inversion circuit is coupled to the first node. The third inversion circuit inverts a signal at the first node, and an output electrode of the third inversion circuit is coupled to a second node. The fourth inversion circuit is turned on in response to the control signal, and inverts the signal at the first node when turned on. An output electrode of the fourth inversion circuit is coupled to the second node. The fifth inversion circuit inverts a signal at the second node to generate an output signal.

Delay cell and delay line having the same

A duty cycle error accumulation circuit includes first to nth delay units and a feedback unit. The first to nth delay units receive a clock signal, a first input signal and a second input signal, respectively, to generate a first output signal and a second output signal by delaying one signal selected from first and second input signals based on a logic level of the clock signal. The feedback unit supplies second input signal to a kth delay unit based on second output signal of a (k+1)th delay unit. The first output signal of the kth delay unit is supplied to the (k+1)th delay unit as first input signal, and the clock signal is supplied to the first delay unit as first input signal and to the nth delay unit as second input signal. The duty cycle error accumulation circuit effectively corrects a duty cycle of a clock signal.

Duty cycle error accumulation circuit and duty cycle correction circuit having the same

A digital delay line includes a plurality of delay cells therein. The delay line is configured to delay a periodic signal received at a first input thereof by passing the periodic signal through a selected number of the plurality of delay cells, in response to a discontinuous thermometer code that encodes the selected number. A code converter is provided, which includes a group bit decoder, a shared bit decoder and a code output cell array, which are collectively configured to generate the discontinuous thermometer code in response to a binary control code.

Clock delay circuit and delay locked loop including the same

A delay locked loop is provided. The delay locked loop controls the number of delay cells that delay the phase of an input clock during a locking operation and controls a phase delay value of at least one delay cell among a plurality of delay cells after the locking operation is completed.

Delay-locked loop and electronic device including the same

A delay locked loop controls a plurality of delay blocks included in a delay line and thus generate a plurality of clock signals which have a frequency obtained by multiplying a frequency of a reference clock signal, an accurate phase delay, and a constant duty cycle. The delay locked loop calculates an initial delay value and applies it to the delay blocks, thereby preventing harmonic locking and reducing locking time.

Delay locked loop, electronic device including the same, and method of operating the same

A duty control circuit including a clock input unit connected to a first node and a second node, the clock input unit receiving an input clock signal through the first node and changing a voltage of the second node to one of a first voltage level and a second voltage level in response to respective low and high logic levels of the input clock signal, a slew controller connected to the second node, the slew controller including one or more switches controlled by respective control signals, the one or more switches providing one of the first voltage level and the second voltage level to the second node in response to the control signals such that a slew rate of a signal at the second node is varied, and a clock output unit, the clock output unit outputting an output clock signal having a duty that varies.

Duty control circuit and semiconductor device having the same

A duty cycle correction circuit includes a duty cycle correction portion that is configured to output a correction signal that is obtained by correcting a duty cycle of an input signal and to output a delayed signal that is obtained by delaying the correction signal, a complementary portion that is configured to output a complementary signal that is the complement of the delayed signal, and a phase interpolator that is configured to phase interpolate the complementary signal and the correction signal.

Growing community of inventors

Hwaseong-si, South Korea

Jong-Ryun Choi