Industry-University Cooperation Foundation Hanyang University

Samsung Electronics Co., Ltd.

Electronics and Telecommunications Research Institute

Lg Innotek Co., Ltd.

Etamax Co., Ltd

Jong-In Shim

Hyunsung Kim

Dong Pyo Han

Seong-Taek Hwang

Dae-Kwang Jung

Kyoung-ho Ha

Yong Tae Moon

Dong-Hoon Jang

Dae Seob Han

Han-youl Ryu

Dong-Soo Bang

Jongbae Kim

Kyu-sang Kim

Hyun Don Jung

Il-Gyun Choi

Jung-hye Chae

Dong-Soo Shin

Disclosed are a method and device for measuring the resistance of a light-emitting diode that can measure the resistance value of the light-emitting diode accurately in a non-destructive manner. The disclosed method may include: measuring a first radiative current component of an injected current for the light-emitting diode by using the internal quantum efficiency of the light-emitting diode; generating a second radiative current component by modeling the first radiative current component; and computing a resistance value of the light-emitting diode by using the first and second radiative current components resulting from an applied voltage to the light-emitting diode.

Method and apparatus for measuring resistance of light emitting diode

A method for measuring the efficiency of an optical element is disclosed. The intensity of the light emitted from the optical element is measured by applying an injection current to the optical element, a relative radiative efficiency is calculated from a ratio of the intensity of the emitted light to the injection current, the maximum relative radiative efficiency and the maximum injection current corresponding to the maximum relative radiative efficiency are obtained, a reference injection current for minimizing an amount of change of a recombination coefficient in an active layer of the optical element in correspondence with a carrier density change in the active layer of the optical element is extracted from data of injection currents that are equal to or less than the maximum injection current and data of relative radiative efficiencies that are equal to or less than the maximum relative radiative efficiency, a reference internal quantum efficiency of the optical element is calculated from the reference injection current, and internal quantum efficiencies of the optical element in various injection currents are calculated from the reference internal quantum efficiency.

Method and device for measuring internal quantum efficiency of an optical element

Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.

Light emitting device

A light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on a substrate, and a first electrode connected to the first semiconductor layer. The first electrode includes an edge electrode including first and second edge portions opposite to each other, and a line electrode including first and second line portions respectively extending from the first and second edge portions. The edge electrode has a closed loop-shape. A distance between the first line portion and the second edge portion is equal to or less than a quarter of a length of the first line portion. A distance between the second line portion and the first edge portion is equal to or less than a quarter of a length of the second line portion.

Light emitting diode and light emitting diode package

Provided is a method and apparatus for measuring efficiency of an optical device. In the method, a power of emission light from the optical device is calculated by irradiating an excitation stimulus on the optical device. A power of a reference excitation stimulus at which a variation of recombination coefficients in a quantum well of the optical device with respect to a variation of carrier concentration in the quantum well of the optical device becomes minimum is extracted. An internal quantum efficiency of the optical device at the power of the reference excitation stimulus is calculated. An internal quantum efficiency of the optical device at powers of various excitation stimuli is calculated from the internal quantum efficiency of the optical device at the power of the reference excitation stimulus.

Method and apparatus for measuring internal quantum well efficiency of LED

A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

Semiconductor laser diode having ridge

Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer.

Broad-band optical semiconductor device and a method for manufacturing the same

A distributed feedback semiconductor laser and a method of manufacture includes first and second clad layers having predetermined refractive indexes that are formed on a semiconductor substrate. A guide layer propagates light between the first and second clad layers. An oscillating clad layer oscillates light at a predetermined wavelength and an amplifying clad layer amplifies the light with a predetermined gain between the first clad layer and the guide layer. The distributed feedback semiconductor laser is divided into a laser oscillation section including the oscillating clad layer and a laser amplification section including the amplifying active layer. First and second gratings are formed on the lower surface of the guide layer in the laser oscillation section and in the laser amplification section, respectively.

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Seoul, South Korea

Jong-In Shim