Dongjin Semichem Co., Ltd.

Korea Institute of Science and Technology

Jong Chul Shin

Jae Hyun Kim

Jong Dai Park

Ji Young Byun

Jae Soo Kim

Jin-Kook Yoon

Sung Hoon Jin

Goo Hwa Lee

Min Gun Lee

Min Sung Park

Hye Jung Park

Dae Ho Rho

Kyeung Ho Kim

Doo Yong Kim

Chang Yong Park

Jong Kown Lee

Disclosed is a chemical-mechanical polishing slurry composition having a small change in pH over time under an acidic condition and thus being easy to store for a long time. The chemical-mechanical polishing slurry composition includes an abrasive; an amount of about 0.000006 to 0.01 weight % of an aluminum component based on the total weight of the polishing slurry composition; and water. The number of silanol groups on a surface of the abrasive and a content of the aluminum component satisfy the requirements of following Equation 1:0.0005&#x2264;()*100&#x2264;4.5,&#x2003;&#x2003;[Equation 1]

Polishing slurry composition

The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.

Metal film polishing slurry composition, and method for reducing scratches generated when polishing metal film by using same

A MoSi&#x2014;SiNcomposite coating which is coated on a surface of base materials. The MoSi&#x2014;SiNcomposite coating on the surface of the base material can be formed by forming a MoN diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi&#x2014;SiNcomposite coating by vapor-depositing of silicon on the surface of the MoN diffusion layer, or the MoSi&#x2014;SiNcomposite coating on the surface of the base material can be formed by forming a MoSidiffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSidiffusion layer into a MoSidiffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a MoSi&#x2014;SiNcomposite diffusion layer by vapor-depositing of nitrogen on the surface of the MosSidiffusion layer by the CVD method and forming a MoSi&#x2014;SiNcomposite coating by vapor-depositing of silicon on the surface of the MoSi&#x2014;SiNcomposite diffusion layer.

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Growing community of inventors

Gyeonggi-do, South Korea

Jong Chul Shin