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Rego Park, NY, United States of America

Jonathan T Shaw

Average Co-Inventor Count = 6.00

ph-index = 7

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 98

Jonathan T ShawArvind Kumar (16 patents)Jonathan T ShawChung-Hsun Lin (16 patents)Jonathan T ShawShreesh Narasimha (16 patents)Jonathan T ShawAnthony I Chou (16 patents)Jonathan T ShawClaude Ortolland (16 patents)Jonathan T ShawJonathan T Shaw (16 patents)Arvind KumarArvind Kumar (135 patents)Chung-Hsun LinChung-Hsun Lin (133 patents)Shreesh NarasimhaShreesh Narasimha (115 patents)Anthony I ChouAnthony I Chou (72 patents)Claude OrtollandClaude Ortolland (29 patents)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. International Business Machines Corporation (14 from 164,108 patents)

2. Adeia Semiconductor Bonding Technologies Inc. (2 from 1,853 patents)


16 patents:

1. 11101357 - Asymmetric high-k dielectric for reducing gate induced drain leakage

2. 10734492 - Asymmetric high-k dielectric for reducing gate induced drain leakage

3. 10381452 - Asymmetric high-k dielectric for reducing gate induced drain leakage

4. 10374048 - Asymmetric high-k dielectric for reducing gate induced drain leakage

5. 10367072 - Asymmetric high-k dielectric for reducing gate induced drain leakage

6. 9922831 - Asymmetric high-k dielectric for reducing gate induced drain leakage

7. 9859122 - Asymmetric high-k dielectric for reducing gate induced drain leakage

8. 9837319 - Asymmetric high-K dielectric for reducing gate induced drain leakage

9. 9768071 - Asymmetric high-K dielectric for reducing gate induced drain leakage

10. 9721843 - Asymmetric high-k dielectric for reducing gate induced drain leakage

11. 9685379 - Asymmetric high-k dielectric for reducing gate induced drain leakage

12. 9577061 - Asymmetric high-K dielectric for reducing gate induced drain leakage

13. 9570354 - Asymmetric high-K dielectric for reducing gate induced drain leakage

14. 9559010 - Asymmetric high-k dielectric for reducing gate induced drain leakage

15. 9543213 - Asymmetric high-k dielectric for reducing gate induced drain leakage

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as of
12/3/2025
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