Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Jonathan G Weis

George C Jacob

Nan-Rong Chiou

Bainian Qian

Mohammad T Islam

Wenjun Xu

Bhawesh Kumar

Sarah E Mastroianni

The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4'-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4&#x2032;-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G&#x2032;) at 65&#xb0; C. of from 125 to 500 MPa, and a damping component (G&#x2033;/G&#x2032; measured by shear dynamic mechanical analysis (DMA), ASTM D5279-08 (2008)) at 50&#xb0; C. of from 0.06 to 0.13.

Chemical mechanical polishing pads for improved removal rate and planarization

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

High planarization efficiency chemical mechanical polishing pads and methods of making

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Bear, DE, United States of America

Jonathan G Weis