Taiwan Semiconductor Manufacturing Comp. Ltd.

JoJo Lee

Da-Yuan Lee

Ming-Hsing Tsai

Weng Chang

Yi-Hung Lin

Hsueh Wen Tsau

Cheng-Yen Tsai

Ying-Chieh Hung

Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).

Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby

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Hsinchu, Taiwan

JoJo Lee