Zilog, Inc.

Lilliputian Systems, Inc.

John Rule

Samuel B Schaevitz

Jack Berg

Gregory Hindman

Zachary Byars

Vladimir Petrovsky

Atul Verma

Ramanan Ganeshananthan

The present invention concerns a method for doping a polysilicon layer with phosphorous in which phosphorous oxychloride is supplied to the silicon wafer near the beginning of the oven temperature ramping of the silicon wafer. By introducing the phosphorous oxychloride earlier than in prior art methods, the present invention can reduce the poly rho and poly rho sigma of the doped polysilicon layer. Alternatively, the root DT of the diffusion of the doped material in the doped silicon region on the silicon wafer can be reduced, which helps to maintain the junction depth of the doped silicon region.

Method of doping a polysilicon layer on a semiconductor wafer

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Nampa, ID, United States of America

John Rule