Applied Materials, Inc.

Other

John Ruffell

Keith D Relleen

Robert J C Mitchell

Karl Frederick Leeser

Geoffrey Ryding

Theodore H Smick

Marvin Farley

Hilton Frank Glavish

Peter Rose

Peter T Kindersley

Robert John Clifford Mitchell

Michael T Wauk

Robert JCS Mitchell

Robert JCS Southwood Mitchell

Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

Apparatus and method for multi-directionally scanning a beam of charged particles

Systems and methods for scanning a beam of charged particles

An apparatus for processing wafers one at a time. The apparatus has a vacuum chamber into which wafers are loaded through a pair of loadlocks which are spaced one above the other. A robot within the vacuum chamber has a pair of gripper arms which are moveable along and rotatable about a vertical axis so as to be moveable between the loadlocks and a wafer processing position. Each of the loadlocks has a vertically moveable portion which is moveable away from the remainder of the loadlock to provide access in a horizontal plane for one of the gripper arms

Method and apparatus for processing wafers

A back scattered ion receiver is mounted on the process chamber of an ion implanter to receive beam ions back scattered from a wafer mounted on the wafer holder in the chamber. Minima in the intensity of back scattered ions as the wafer on the holder is moved relative to the beam direction, can be used to obtain an accurate calibration of the true beam direction. Beam direction error can then be compensated for when operating holder tilt and twist mechanisms so as to bring a process wafer accurately into the required orientation relative to the true beam. If the crystallographic alignment and orientation of process wafers has been precharacterised, this data can be used to control the wafer holder to align process wafers crystallographically to the process beam.

Determining beam alignment in ion implantation using Rutherford Back Scattering

A beam stop ( ) has a charge collecting member ( ) which extends in the direction of scanning of a scanned beam by less than the total distance scanned, so that variation in the charge signal derived from the collecting member can provide a timing signal for use in monitoring alignment of the scanned beam. In a preferred embodiment, the beam stop plate ( ) has slits ( ) leading to apertures ( ) containing charge collecting rods ( ) located within the thickness of the beam stop plate ( ).

Ion implanter and beam stop therefor

An apparatus for a wafer processing system comprising a wafer support chuck attached to a gas delivery system for delivery of a gas to the backside of a wafer supported by the chuck. The gas delivery system has a gas shutoff valve directly connected to the wafer chuck. The shutoff valve provides a positive shutoff with negligible leak rate. By placing the valve in close proximity to the wafer chuck, the volume of the backside gas trapped between the valve and the wafer is minimized. Release of this trapped gas into the process chamber during wafer transfer has no adverse impact on the performance of the processing system.

Backside gas delivery system for a semiconductor wafer processing system

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Sunnyvale, CA, United States of America

John Ruffell