International Business Machines Corporation

Kabushiki Kaisha Toshiba

Siemens Aktiengesellschaft

Infineon Technologies Ag

John Preston Benedict

David M Dobuzinsky

Herbert Lei Ho

Philip L Flaitz

Hiroshi Takato

Herbert Palm

Seiko Yoshida

James F Moseman

Erwin N Hammerl

Johnathan E Faltermeier

Viraj Yashawant Sardesai

Christopher Carr Parks

Tomio Katata

Chienfan Yu

Rajesh Rengarajan

Michael Maldei

Munir-ud-Din Naeem

Prakash Chimanlal Dev

Thomas Rupp

An etch rate of a nitride liner layer is improved relative to an etch rate of a nitride cap layer. The nitride liner layer is located at an exposed portion of a substrate adjacent to a stacked structure also located atop the substrate. The nitride cap layer is located atop the stacked structure. An oxide spacer is formed along sidewalls of the stacked structure. The nitride liner layer is patterned and etched to form at least one opening therein to the substrate while the nitride cap layer remains substantially intact.

Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device

A thin film deposition method comprises the steps of preparing a magnetron sputtering system having a magnetic field generation unit for changing a magnetic field, mounting, as a target, a composite material on a cathode of the magnetron sputtering system, providing a to-be-processed substrate on an anode of the magnetron sputtering system, evacuating a chamber of the magnetron sputtering system and thereafter filling the chamber with inert gas, and applying, onto the cathode, one of DC power and RF power and, at the same time, an alternating magnetic field from a lower portion of the target, thereby controlling a cycle and intensity of the alternating magnetic field to change a ratio of the not less than two components of the thin film in a film thickness direction of the thin film.

Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field

Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O.sub.2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.

Shallow trench isolation with oxide-nitride/oxynitride liner

Growing community of inventors

New Paltz, NY, United States of America

John Preston Benedict