1. Applied Materials, Inc. (27 from 13,755 patents)

2. Comet Technologies USA, Inc. (1 from 35 patents)

1. 10648074 - Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface

2. 10400328 - Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface

3. 9856558 - Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface

4. 9593411 - Physical vapor deposition chamber with capacitive tuning at wafer support

5. 9017533 - Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning

6. 8920611 - Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning

7. 8846451 - Methods for depositing metal in high aspect ratio features

8. 8563428 - Methods for depositing metal in high aspect ratio features

9. 8562798 - Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron

10. 8512526 - Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron

11. 8491759 - RF impedance matching network with secondary frequency and sub-harmonic variant

12. 8435379 - Substrate cleaning chamber and cleaning and conditioning methods

13. 8123969 - Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture

14. 8070925 - Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target

15. 8062484 - Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target