US Government as Represented by the Secretary of the Army

John N Helbert

Charles U Pittman, Jr

A method is disclosed of delineating a desired integrated circuit pattern upon a circuit substrate. According to the method, the copolymer poly(methyl alpha-chloroacrylate-co-methacrylonitrile) is formed by emulsion polymerization techniques. The copolymer is then dissolved in a spinning solvent that will dissolve the copolymer and form a viscous solution. The solution is applied to the surface of the substrate and the substrate spinned to form a smooth, uniform resist film of about 0.3 to 1.0 micron in thickness. The resist film is heated and the region of the resist film to be patterned then exposed to ionizing radiation until exposures greater than 1.5.times.10.sup.-5 C/cm.sup.2 are obtained. The exposed regions of the resist are then developed to the substrate.

Method of delineating a desired integrated circuit pattern upon a

A substrate is patterned by first dissolving polymethacrylonitrile in a spinning solvent that will dissolve the polymer and form a viscous solution. The solution is then applied to the surface of the substrate and the substrate spun to form a smooth, uniform resist film of at least 3000 angstroms in thickness. The resist film is heated and the region of the resist film to be patterned is then exposed to ionizing radiation until the dissolution rate of the irradiated region of the resist film is greater than five times the dissolution rate of the unirradiated region of the resist film. The exposed regions of the resist film are then developed to the substrate in a mixture of acetonitrile or benzonitrile and toluene.

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Eatontown, NJ, United States of America

John N Helbert