Fei Comapny

John M Lindquist

Lynwood W Swanson

Richard J Young

Joseph Puretz

Milton C Jaehnig

Eric S Boleyn

An image-to-image registration system employs interactive computer graphic systems to align and register a number of image representations of a particular device from a variety of sources including, for example, optical microscopic images, computer aided design representations, etc., to an image obtained by a focused ion beam system. The registration enables accurate alignment of the images to the FIB image so that subsurface features which may not be detectable via the FIB image may be located and used to guide operation of the FIB system for milling or conductor/insulator deposition or the like. Counting of aluminum grains is enhanced by use of the invention to register images of a sample taken at several different tilt angles. The registered images are combined to give a more accurate representation of grain boundaries, enabling a more accurate grain count.

Image-to-image registration focused ion beam system

A focused ion beam is directed toward a sample to be analyzed while iodine vapor is directed toward the sample. The iodine vapor, which is formed by heating solid iodine to a temperature of 30.degree. C. to 50.degree. C., aids in sputtering of material impinged by the ion beam and in enhancing the conversion of neutral to ionic sputtered species. A quadrupole mass analyzer is positioned for receiving secondary ions sputtered from the sample whereby chemical analysis is accomplished. The iodine may be initially handled in a solid state, exhibiting a low vapor pressure, and is then heated to moderate temperatures inside a focused ion beam system without presenting a toxic hazard or requiring external plumbing.

Secondary ion mass spectometry system

Semiconductor devices are modified and/or repaired by gas enhanced physical sputtering. A focused ion beam is scanned over an area to be removed while iodine vapor is directed toward the same area. The iodine vapor, which is focused by heating solid iodine to a temperature of 30.degree. C. to 50.degree. C., is adsorbed on the surface of the semiconductor device and aids in the selective sputtering of material to be impinged by the ion beam by enabling a chemical reaction at the material's surface. The iodine may be initially handled in a solid state, exhibiting a low vapor pressure, and is then heated to moderate temperatures inside the focused ion beam system without presenting a toxic hazard. The low reactivity of the iodine enables a high degree of contrast in reaction between the area struck by the ion beam and adjoining areas whereby accurate micromachining can be accomplished.

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Portland, OR, United States of America

John M Lindquist