International Business Machines Corporation

John M Baker

Arne Watson Ballantine

Ying Di Zhang

Alejandro Gabriel Schrott

Alessandro Cesare Callegari

Roger W Cheek

Marc Waine Cantell

Dianne L Lacey

Michael B Rice

Douglas S Armbrust

Mark L Reath

Doreen D DiMilia

Paul Wiliam Pastel

Yih-Cheng Shih

A method and apparatus are provided for controlling a CVD process used to deposit films on semiconductor substrates wherein the by-products of the reaction are measured and monitored during the reaction preferably using mass spectrometry and the results used to calculate the concentrations of the by-products and to control the CVD reaction process based on the by-product concentrations. An exemplary CVD process is the deposition of tungsten metal on a semiconductor wafer. A preferred method and apparatus uses a capillary gas sampling device for removing the by-product gases of the reaction as a feed for the mass spectrometer. The capillary gas sampling device is preferably connected to a differential pump.

In-situ monitoring of chemical vapor deposition process by mass spectrometry

A method for conditioning the inside walls of a process chamber is described incorporating a selected process gas such as Br, Br , HBr, Cl , HCl, F , SiF , and NF , a pressure controller, and a timer for soaking the chamber. The invention overcomes the problem of running dummy product wafers to condition the chamber.

Method for conditioning process chambers

A method for forming an ohmic contact on a GaAs semiconductor material comprising depositing a non-uniform layer of Au onto the surface layer of the semiconductor material, depositing a multi-layer ohmic contact of AuGeNi onto the non-uniform layer and alloying the ohmic contact to the semiconductor material. The non-uniform Au layer may be deposited by backscattering Au during sputter cleaning of the semiconductor surface wherein the electrode is coated with Au. After alloying, the ohmic contact comprises a two layer structure having a high density of large area NiAs(Ge) grains contacting the semiconductor material as the first layer and an AuGa phase as the top layer. The ohmic contact has reduced contact resistance and exhibits a reduction in the spread of contact resistance after high temperature annealing.

Ohmic contacts for semiconductor devices and method for forming ohmic

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John M Baker