Chartered Semiconductor Manufacturing Ltd (corporation)

Applied Materials, Inc.

Globalfoundries Singapore Pte. Ltd.

Other

National University of Singapore

Nanyang Technological University

Chartered Semiconductor

John Leonard Sudijono

Simon Yew-Meng Chooi

Sudipto Ranendra Roy

Yakub Aliyu

Subhash Gupta

Mei Sheng Zhou

Yi Liang Xu

Paul Kwok Keung Ho

Liang Choo Hsia

Bhaskar Jyoti Bhuyan

Paul Kwok Ho

Abhijit Basu Mallick

Vicknesh Sahmuganathan

Xu Yi

Liu Huang

Eswaranand Venkatasubramanian

Khee Yong Lim

Yong Meng Lee

Wenhe Lin

Chung Woh Lai

Young Way Teh

Doreen Wei Ying Yong

Hui Peng Koh

Wee Leng Tan

Mark Joseph Saly

Huang Liu

Bei Chao Zhang

Kian Ping Loh

Kwok Keung Paul Ho

Jiteng Gu

Alan Cuthbertson

Yong Xin Wang

Vladislav Y Vassiliev

Zhongxin Chen

Chandan Kr Barik

Chandan Das

Sze Chieh Tan

Juan Boon Tan

Feng Quan Liu

Thai Cheng Chua

Susmit Singha Roy

Feng Chen

Andrea Leoncini

Michael G Haverty

Cong Trinh

Tuck Foong Koh

Peter Chew

Muthukumar Kaliappan

Arthur Ang

Xinke Wang

Qiong Li

Edwin Goh

San Leong Liew

Richard Ming Wah Wong

Yingqian Chen

Wei Ying Doreen Yong

Jiecong Tang

Koh Yee Wee

Lawrence Alfred Clevenger

Lap Chan

Philip Allan Kraus

Laertis Economikos

Eric J Bergman

Mikhail Korolik

James S Papanu

Arvind Sundarrajan

Yelehanka Ramachandramurthy Pradeep

Guan Huei See

Ting Cheong Ang

Mei-Sheng Zhou

Fan Zhang

Wei Lu

Chim Seng Seet

Johnny Widodo

Prayudi Lianto

Charles Lin

Wuping Liu

Zeqing Shen

Xiao Wu Gong

Yong Kong Siew

Meisheng Zhou

Jie Yu

Tong Qing Chen

Raymond Joy

Jenn-Yue Wang

Harianto Wong

Wu Ping Liu

Christian Valencia

Hsia Liang Choo

Tan Juan Boon

Feng Zhao

John Elmslie Martin

Boon Meng Seah

Liang Ch O Hsia

Liu Wu Ping

Anil Kumar Tummanapelli

Quah Ya Lin

Shao Beng Law

Haisen Xu

Methods and apparatus for processing a substrate are provided herein. For example, methods for enhancing surface hydrophilicity on a substrate comprise a) supplying, using a remote plasma source, water vapor plasma to a processing volume of a plasma processing chamber to treat a bonding surface of the substrate, b) supplying at least one of microwave power or RF power at a frequency from about 1 kHz to 10 GHz and a power from about 1 kW to 10 kW to the plasma processing chamber to maintain the water vapor plasma within the processing volume during operation, and c) continuing a) and b) until the bonding surface of the substrate has a hydrophilic contact angle of less than 10°.

Water vapor plasma to enhance surface hydrophilicity

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.

Nanocrystalline diamond with amorphous interfacial layer

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(0) precursors for deposition of molybdenum films

Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.

Methods to reduce UNCD film roughness

Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

Isotropic silicon nitride removal

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SiN) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SiN) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Chalcogen precursors for deposition of silicon nitride

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

Low temperature growth of transition metal chalcogenides

A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.

Methods for selective removal of contact oxides

Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

Method of forming a diamond film

Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

Semiconductor device patterning methods

Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

Area selective carbon-based film deposition

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

In situ nucleation for nanocrystalline diamond film deposition

Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

Tribological properties of diamond films

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Singapore, Singapore

John Leonard Sudijono