At&t Bell Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

American Telephone and Telegraph, Co.

John L Zilko

Andrew Gomperz Dentai

Charles H Joyner, Jr

Timothy W Weidman

Louis A Koszi

Robert Louis Hartman

Richard S Williams

Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1.times.10.sup.7 ohm/cm have been achieved.

Method of forming III-V semi-insulating films using organo-metallic

Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by an MOCVD process through the use of bis arene titanium sources, such as cyclopentadienyl cycloheptatrienyl titanium and bis (benzene) titanium.

Semi-insulating group III-V based compositions doped using bis arene

A method of producing patternable resistive regions in III-V compound semiconductor devices and a resulting device structure having improved current characteristics. III-V semiconductor substrates are irradiated with inert ions to produce a resistive region therein. At least one epitaxial layer is grown over the substrate while maintaining the resistive characteristics within the substrate. A second resistive region is then formed in at least the top epitaxial layer. This second resistive region is aligned with the first one in order to minimize current spread through the device.

Method of improving current confinement in semiconductor lasers by inert

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Fanwood, NJ, United States of America

John L Zilko