Rca Inc.

The Boc Group, Inc.

John L Vossen

Bernard Halon

Peter A Sieck

Russell J Hill

Stephen C Schulz

Joseph Zelez

Frederick Russell Nyman

Herbert A Weakliem

George Frederick Nichols

Dennis Glendon Fisher

An elongated anode structure having multiple points to which electrons are attracted is provided. The anode can be constructed of multiple wire brushes that are attached to a metal rod. Use of the anode in magnetron systems significantly reduces dielectric material build-up and improves film uniformity in both dc reactive and non-reactive sputtering. Moreover, the anode reduces overheating and increases the operation time of magnetron systems undergoing reactive sputtering of dielectric materials. In one embodiment, the magnetron system has a cylindrical cathode and a pair of elongated anodes positioned parallel to and equidistance from the cathode. The anode structure is particularly suited for sputtering uniform films of dielectric materials, including silicon dioxide and silicon nitride.

Anode structure for magnetron sputtering systems

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Glow discharge plasma deposition of thin films

Transparent conductive films of indium oxide and zirconium oxide, methodology for annealing them and an etchant therefor are disclosed.

Transparent conductive film

A method of forming areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide is disclosed. The film is selectively ion implanted with protons and then annealed to lower the resistivity in the non-implanted portion.

Transparent conductive film having areas of high and low resistivity

A method of improving the uniformity and line-width control in the plasma etching of aluminum and its alloys by adding to the etchant gas an effective amount of a gaseous hydrocarbon which will polymerize under glow discharge conditions.

Plasma etching of aluminum

A method of improving the variable induction time encountered in the plasma etching of aluminum and similar metals comprising pretreatment by hydrogen glow discharge.

Plasma etching technique

A method of anisotropic etching of aluminum or an alloy thereof comprising using as the etch gas a mixture of boron trichloride, trichloromethane and hydrogen. The etchant mixture advantageously also contains nitrogen and helium.

Anisotropic etching of aluminum

An improvement in the etching of aluminum utilizing a carbon-containing etchant gas is provided whereby the residues remaining after etching are treated in a nitrogen glow discharge for a time effective in removing them or rendering them susceptible to removal by conventional means.

Removal of plasma etching residues

An improved metal coating for a video disc of a grooved polymer disc, a conductive metal coating thereon and a dielectric coating on said metal coating, wherein said metal coating comprises a film of a pseudoalloy composition of an alloy of nickel and chromium and, optionally, iron, containing from about 10 to about 25 atomic percent of oxygen admixed with from about 10 to 15 atomic percent of copper.

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Bridgewater, NJ, United States of America

John L Vossen