University of Georgia Research Foundation, Inc.

National Technology & Engineering Solutions of Sandia, LLC

John L Stickney

David Robinson

Patrick J Cappillino

Qing Lei

Ignacio Villegas

David M Benson

Brian W Gregory

Leah B Sheridan

Choong K Rhee

A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

Electroless atomic layer deposition

A method for the digital electrochemical etching of compound semiconductors in an electrochemical flow cell system in which alternating electrochemical potentials are applied between a reference electrode and the compound semiconductor sufficient to strip portions, preferably atomic layers, of the elements of compound semiconductors from the compound semiconductors.

Digital electrochemical etching of compound semiconductors

A method to electrochemically deposit semiconductors and for the electrochemical formation of epitaxial thin-film, single-crystalline compound semiconductors comprising alternating electrodeposition of atomic layers of selected pairs of elements using underpotential deposition.

Method to electrochemically deposit compound semiconductors

Growing community of inventors

Athens, GA, United States of America

John L Stickney