Intel Corporation

John K Chu

John T Orton

Jagir S Multani

Robert Jecmen

Li-Shun Wang

Sanjiv K Mittal

A method and an apparatus of removing a particle from a metal plug on a substrate is disclosed. The method comprises introducing a slurry onto the metal layer and polishing the metal layer. A solution comprising hydrogen peroxide is introduced onto the metal plug and at least one particle is removed from the metal plug.

Removal of residue from a substrate

A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into a PSG passivation layer. The temperature of the passivation deposition may need to be kept to a temperature low enough so that the boron compound used for the boron source does not decompose prior to reacting with other reactacts.

Crack resistant passivation layer

A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into a PSG passivation layer. The temperature of the passivation deposition may need to be kept to a temperature low enough so that the boron compound used for the boron source does not decompose prior to reacting with other reactants.

A planarization process for a double metal very large scale integration (VLSI) technology is disclosed. To compensate for an irregular surface topology encountered in a dielectric medium between the two metals, a CVD dielectric layer and a glass layer are first deposited above the first metal. Then an etch-back process is used to uniformly etch back the CVD dielectric and the glass layers at the same rate, leaving a planarized surface for subsequent deposition of a second dielectric layer and a second metal layer.

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Fremont, CA, United States of America

John K Chu