Advanced Micro Devices Corporation

Hewlett-packard Development Company, L.p.

Hewlett-packard Company

Globalfoundries Inc.

Xilinx, Inc.

Ati Technologies Ulc

Other

John J Wuu

Russell J Schreiber

Donald R Weiss

Samuel D Naffziger

Patrick J Shyvers

Milind S Bhagavat

Brett P Wilkerson

Keith Allen Kasprak

Martin Paul Piorkowski

Kaushik Mysore

Santosh Yachareni

Kumar Rahul

Michael K Ciraula

Sang Hoo Dhong

Richard Thomas Schultz

Jin Haeng Cho

Gurupada Mandal

Arijit Banerjee

Stephen Victor Kosonocky

Vydhyanathan Kalyanasundharam

Rahul Kumar Agarwal

Kevin X Zhang

Reid James Riedlinger

Chintan S Patel

Nui Chong

Alan Dodson Smith

Pierre Maillard

William McGee

Richard L Woodruff

Jonathan E Lachman

Todd W Mellinger

David Hugh McIntyre

John Reginald Riley

Blaine Stackhouse

Edward Chang

Amlan Ghosh

Ryan Thomas Freese

Alexander W Schaefer

Cheang Whang Chang

Tyrone Tung Huang

Sahilpreet Singh

Ravi T Jotwani

Srinivas R Sathu

Samiul Haque Khan

Ricardo Cantu

Michael A Dreesen

Charles Morrganti

David Johnson

Jasmeet Singh Narang

Christopher Klement

Wonjun Jung

Jaroslaw Kuszczak

Gaurav Singla

John Reginald Riley, Iii

Kerrie Vercant Underhill

Mrinmoy Goswami

Tabrez Alam

Ryan Alan Selby

Md Hussain

Sanat Kumar Dubey

Gokul Puthenpurayil Ravindran

A system and method for efficiently capturing data by sequential circuits across multiple operating conditions are described. In various implementations, an integrated circuit includes multiple signal arrival adjusters both at its I/O boundaries and across its die. The signal arrival adjuster includes two internal timing paths, each with a respective latency. The signal arrival adjuster receives an input signal, and generates an output signal from the a selected one of the first timing path and the second timing path. The signal arrival adjuster sends the output signal to a sequential circuit. The sequential circuit uses the output signal as one of an input data signal and an input clock signal. The selection between the two timing paths within the signal arrival adjuster aids satisfying the setup and hold time requirements of the sequential circuit.

Dynamic setup and hold times adjustment for memories

The disclosed device can include a bitcell array located on a first metal layer including a first subarray of bitcells and a second subarray of bitcells; a first write driver device coupled to the first subarray of bitcells from a first end of the first subarray; a second write driver device coupled to the second subarray of bitcells from a first end of the second subarray; a third write driver device coupled to the first subarray of bitcells from a second end of the first subarray; and a fourth write driver device coupled to the second subarray of bitcells from the second end of the second subarray. Various other devices, systems, and methods of manufacture are also disclosed.

Devices and systems for flying bitline with jumper cell

Embodiments herein describe a circuit for detecting a single event upset (SEU). The circuit includes a latch including an output node, a first parity node, and a second parity node and correction circuitry configured to correct a single event upset (SEU) at the output node using the first and second parity nodes.

System and method for SEU detection and correction

Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.

Arrangement and thermal management of 3D stacked dies

An integrated circuit (IC) device includes an error correction code (ECC) encoder circuitry configured to receive input data, determine min-terms in a Hamming matrix (H-Matrix) corresponding to the input data, and generate ECC data based on the min-terms and an output codeword based on the ECC data, and an error correction circuitry configured to generate a corrected output codeword based on the output codeword.

ECC optimization

A technique reduces power consumption of a bit cell in a memory and provides write assistance to the bit cell. When the bit cell is active, a power-saving write-assist circuit coupled to the bit cell is selectively sized according to a type of memory access. When the bit cell is inactive, the virtual power supply node floats to a predetermined voltage between a first voltage on a first power supply node coupled to the bit cell and a second voltage on a second power supply node coupled to the bit cell. A method for controlling power consumption of a bit cell and assisting a write to the bit cell includes providing a reference voltage to a virtual power supply node coupled to the bit cell. The reference voltage is provided based on an operational state of the bit cell and a type of memory access to the bit cell.

SRAM power savings and write assist

Integrated circuits and integrated circuit dies include TSVs laid out in symmetrical patterns. Because of the symmetrical arrangement of the TSVs and associated routing patterns, an integrated circuit is able to support operation of multiple similar dies that are placed in different positions in the integrated circuit. This in turn simplifies the design and production of the multiple similar dies, thus reducing development and manufacturing costs for the corresponding integrated circuits.

Through-silicon via layout for multi-die integrated circuits

An apparatus and method for providing efficient floor planning, power, and performance tradeoffs of memory accesses. A dual read port and single write port memory bit cell uses two asymmetrical read access circuits for conveying stored data on two read bit lines. The two read bit lines are pre-charged to different voltage reference levels. The layout of the memory bit cell places the two read bit lines on an opposed edge from the single write bit line. The layout uses a dummy gate placed over both p-type diffusion and n-type diffusion between the edges. The layout has a same number of p-type transistors as n-type transistors despite using asymmetrical read access circuits. The layout also has a contacted gate pitch that is one more than the number of p-type transistors.

Dual read port latch array bitcell

A memory device is disclosed herein that leverages high ratio column MUXES to improve SEU resistance. The memory device may be utilized in an integrated circuit die and chip packages having the same. In one example, as semiconductor memory device is provided that includes first and second arrays of semiconductor memory cells, a plurality of sense amplifiers configured to read data states from the first and second arrays of memory cells, and a first plurality of high ratio MUXES connecting the first and second arrays of memory cells to the plurality of sense amplifiers.

Single event upset tolerant memory device

An apparatus and method for providing efficient floor planning, power, and performance tradeoffs of memory accesses. Adjacent bit cells in a column of an array use a split read port such that the bit cells do not share a read bit line while sharing a write bit line. The adjacent bit cells include asymmetrical read access circuits that convey data stored by latch circuitry of a corresponding bit cell to a corresponding read bit line. The layout of adjacent bit cells provides a number of contacted gate pitches per bit cell that is less than a sum of the maximum number of metal gates in layout of each of the adjacent bit cells divided by the number of adjacent bit cells.

Split read port latch array bit cell

A stacked die system includes at least three dies. A first die has a same design as a second die. The first die includes a first circuit, and the second die includes a corresponding second circuit. A signal is received at the first die and sent to the third die via the second die. The signal is routed through either the first circuit or the second circuit but not both. Accordingly, an operation is performed on the signal prior to the signal reaching the third die but the operation is not performed by both the first circuit and the second circuit.

Stacked die circuit routing system and method

A cache includes an upstream port, a cache memory for storing cache lines each having a line width, and a cache controller. The cache controller is coupled to the upstream port and the cache memory. The upstream port transfers data words having a transfer width less than the line width. In response to a cache line fill, the cache controller selectively determines data bus inversion information for a sequence of data words having the transfer width, and stores the data bus inversion information along with selected inverted data words for the cache line fill in the cache memory.

Low power cache

Systems, apparatuses, and methods for routing traffic through vertically stacked semiconductor dies are disclosed. A first semiconductor die has a second die stacked vertically on top of it in a three-dimensional integrated circuit. The first die includes a through silicon via (TSV) interconnect that does not traverse the first die. The first die includes one or more metal layers above the TSV, which connect to a bonding pad interface through a bonding pad via. If the signals transferred through the TSV of the first die are shared by the second die, then the second die includes a TSV aligned with the bonding pad interface of the first die. If these signals are not shared by the second die, then the second die includes an insulated portion of a wafer backside aligned with the bonding pad interface.

Scheme for enabling die reuse in 3D stacked products

A bit cell of an SRAM implemented using standard cell design rules includes a write portion and a read portion. The write portion includes a pass gate coupled to an input node of the bit cell and supplies data on the input node to a first node of the bit cell while write word line signals are asserted. An inverter is coupled to the first node and supplies inverted data. A keeper circuit that is coupled to the inverter maintains the data on the first node when the write word line signals are deasserted. The read portion of the bit cell receives read word line signals and the inverted data and is responsive to assertion of the read word line signals to supply an output node of the read portion of the bit cell with output data that corresponds to the data on the first node.

Latch bit cells

A layout for a 6T SRAM cell array is disclosed. The layout doubles the number of bits per bit cell in the array by implementing dual pairs of bitlines spanning bit cell columns in the array. Alternating connections (e.g., alternating vias) may be provided for wordline access to the bitlines in the layout. Alternating the connections may reduce RC delay in the layout.

Dual-track bitline scheme for 6T SRAM cells

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Fort Collins, CO, United States of America

John J Wuu