Lam Research Corporation

John Folden Stumpf

Karl Frederick Leeser

Dirk Rudolph

Lihua Li Huang

Timothy Dyer

Ales Janhar

Eric Tu

Damien Long

David Allen Ruberg

Norman Nakashima

Justin Remulla

Various embodiments include systems and apparatuses for divertless dosing of process gases, including divertless dosing of precursor gases in deposition systems. In one example, the disclosed subject matter is a divertless, pressure-based gas-dosing system that includes a process gas inlet coupled to an inlet valve, a flow controller coupled to be downstream of the inlet valve, and a line charge-volume (LCV) coupled to be downstream of the inlet valve and the flow controller. The LCV is to receive an initial single-dose of the process gas. A pressure sensor is coupled to the LCV to determine a pressure level within the LCV and an outlet valve is pneumatically coupled to be downstream of the LCV. The outlet valve is to be coupled pneumatically on a downstream side of the outlet valve to a process chamber. Other systems, apparatuses, and methods are disclosed.

Divertless gas-dosing

Various embodiments include apparatuses and methods to form the apparatus. In one embodiment, the apparatus is a flow meter having inlet and outlet portions for transporting a fluid along a flow path. A flow-restrictor element is formed within the flow path to impart a pressure drop to the fluid. A flow sensor has a first surface of the flow sensor in direct fluid communication with fluid flowing upstream of the flow-restrictor element and a second surface, on a portion of the flow sensor opposite to the first surface, in direct fluid communication with fluid flowing downstream of the flow-restrictor element. The flow sensor senses a differential pressure in the fluid due to the at least one flow-restrictor element. Other apparatuses and systems are disclosed.

Differential-pressure-based flow meters

In one embodiment, the disclosed apparatus is at least one gas-primitive substrate for use in a gas-delivery box. Each of the at least one gas-primitive substrates has at least one location on which a gas-delivery component is to be mounted. The at least one location has at least a gas-delivery component inlet port and a gas-delivery component outlet port formed within a body of the gas-primitive substrate. At least one first pair of bore holes comprising a gas-flow path is formed on an upstream side and a downstream side, respectively, of the location of the gas-delivery component. Other apparatuses and systems are disclosed.

Modular-component system for gas delivery

Various embodiments include methods and apparatuses to provide human safety and machine safety and operations. In one example, a distributed interlock system includes at least one master device coupled to a number of slave device. The slave devices receive signals from one or more tools and provide the signals to the master device. The master device evaluates the signals and prevents unsafe conditions prior to one or more command executions, related to the unsafe conditions, being transmitted to one or more of the slave devices. Other methods and systems are disclosed.

Configurable distributed-interlock-system

In one embodiment, a method for forming a direct fusion bond between fractional components of a semiconductor laminate structure can include generating one or more direct bonding surfaces on each of a plurality of semiconductor wafers. A first fractional component and a second fractional component can be cut from at least one of the plurality of semiconductor wafers. A second direct bonding surface of the second fractional component can be placed into contact with a first direct bonding surface of the first fractional component to define an initial contact area. An angle of approach between the second direct bonding surface of the second fractional component and the first direct bonding surface of the first fractional component can be closed to create a direct fusion bond of a semiconductor laminate structure. The direct fusion bond can be larger than the initial contact area.

Methods and systems for forming semiconductor laminate structures

A method of ductile mode machining a component of a plasma processing apparatus wherein the component is made of nonmetallic hard and brittle material wherein the method comprises single point turning the component with a diamond cutting tool causing a portion of the nonmetallic hard and brittle material to undergo a high pressure phase transformation to form a ductile phase portion of the hard and brittle material during chip formation wherein a turned surface is formed from a phase changed material and the turned surface is a grooved textured surface of phase changed material.

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Portland, OR, United States of America

John Folden Stumpf