Lam Research Corporation

John C Valcore, Jr

Bradford J Lyndaker

Arthur M Howald

Andrew Fong

Henry Povolny

David Hopkins

Harmeet Singh

Tony San

James Rogers

Seyed Jafar Jafarian-Tehrani

Alexei Marakhtanov

Zhigang Chen

Arthur H Sato

Seonkyung Lee

Nicholas Edward Webb

Bostjan Pust

Peter T Muraoka

Ed Santos

Eric A Hudson

Ying Wu

Konstantin Makhratchev

Saurabh J Ullal

Ryan Bise

Travis Joseph Wong

Ernest Beauel Hanks

Daniel Byun

Sandeep Mudunuri

Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.

Methods and apparatus for controlling plasma in a plasma processing system

Systems and methods for tuning a megahertz radio frequency (RF) generator within a cycle of operation of a kilohertz (kHz) RF generator are described. In one of the methods, a predetermined periodic waveform is provided to a processor. The processor uses a computer-based model to determine plurality of frequency parameters for the predetermined periodic waveform. The frequency parameters are applied to the megahertz RF generator to generate an RF signal having the frequency parameters during one or more cycles of operation of the kilohertz RF generator.

Systems and methods for tuning a MHz RF generator within a cycle of operation of a kHz RF generator

Systems and methods for compressing data are described. One of the methods includes receiving a plurality of measurement signals from one or more sensors coupled to a radio frequency (RF) transmission path of a plasma tool. The RF transmission path is from an output of an RF generator to an electrode of a plasma chamber. The method includes converting the plurality of measurement signals from an analog form to a digital form to sample data and processing the data to reduce an amount of the data. The amount of the data is compressed to output compressed data. The method includes sending the compressed data to a controller for controlling the plasma tool.

Sensor data compression in a plasma tool

Systems and methods for tuning a MHz RF generator within a cycle of operation of a kHZ RF generator

Systems and methods for adjusting power and frequency based on three or more states are described. One of the methods includes receiving a pulsed signal having multiple states. The pulsed signal is received by multiple radio frequency (RF) generators. When the pulsed signal having a first state is received, an RF signal having a pre-set power level is generated by a first RF generator and an RF signal having a pre-set power level is generated by a second RF generator. Moreover, when the pulsed signal having a second state is received, RF signals having pre-set power levels are generated by the first and second RF generators. Furthermore, when the pulsed signal having a third state is received, RF signals having pre-set power levels are generated by the first and second RF generators.

Adjustment of power and frequency based on three or more states

Systems and methods for identifying a location of a fault in an RF transmission system includes characterizing the RF transmission system and selecting one of the stage in the RF transmission system as an initial selected stage. An output of the initial selected stage can be measured in the characterized RF transmission system. The measured output of the initial selected stage is propagated through a baseline RF model and a point of deflection is identified in a resulting RF model of the RF transmission system.

Using modeling for identifying a location of a fault in an RF transmission system for a plasma system

Systems and methods for reducing reflected towards a higher frequency radio frequency (RF) generator during a period of a lower frequency RF generator and for using a relationship to reduce reflected power are described. By tuning the higher frequency RF generator during the period of the lower frequency RF generator, precise control of the higher frequency RF generator is achieved for reducing power reflected towards the higher frequency RF generator. Moreover, by using the relationship to reduce the reflected power, time is saved during processing of a wafer.

Systems and methods for reducing power reflected towards a higher frequency RF generator during a period of a lower RF generator and for using a relationship to reduce reflected power

Systems and methods for tuning an impedance matching network in a step-wise fashion are described. By tuning the impedance matching network in a step-wise fashion instead of directly to achieve optimum values of a radio frequency (RF) and a combined variable capacitance, processing of a wafer using the tuned optimal values becomes feasible.

Systems and methods for tuning an impedance matching network in a step-wise fashion

An iterative etch process includes a plurality of cycles performed in a successive manner on a substrate. Each cycle of the plurality of cycles includes a deposition phase and an activation phase. The deposition phase is performed before the activation phase in each cycle. The deposition phase is defined as a plasma-based process to enable removal of a particular material from a surface of the substrate. The activation phase is defined as a plasma-based process to remove the particular material from the surface of the substrate. One or more feedback control signals are acquired during the iterative etch process, correlated to a condition of the substrate, and analyzed to determine the condition of the substrate. One or more process parameters of the iterative etch process is/are adjusted based on the condition of the substrate as determined by analyzing the one or more feedback control signals.

Feedback control system for iterative etch process

Systems and methods for segmenting an impedance matching model are described. One of the methods includes receiving the impedance matching model. The impedance matching model represents an impedance matching circuit, which is coupled to an RF generator via an RF cable and to a plasma chamber via an RF transmission line. The method further includes segmenting the impedance matching model into two or more modules of a first set. Each module includes a series circuit and a shunt circuit. The shunt circuit is coupled to the series circuit. The series circuit of the first module is coupled to a cable model and the series circuit of the second module is coupled to an RF transmission model. The series circuit and the shunt circuit of the first module are coupled to the series circuit of the second module. The shunt circuit of the second module is coupled to the RF transmission model.

Segmenting a model within a plasma system

A method to detect a potential fault in a plasma system is described. The method includes accessing a model of one or more parts of the plasma system. The method further includes receiving data regarding a supply of RF power to a plasma chamber. The RF power is supplied using a configuration that includes one or more states. The method also includes using the data to produce model data at an output of the model. The method includes examining the model data. The examination is of one or more variables that characterize performance of a plasma process of the plasma system. The method includes identifying the fault for the one or more variables. The method further includes determining that the fault has occurred for a pre-determined period of time such that the fault is identified as an event. The method includes classifying the event.

RF impedance model based fault detection

Systems and methods for determining ion energy are described. One of the methods includes detecting output of a generator to identify a generator output complex voltage and current (V&I). The generator is coupled to an impedance matching circuit and the impedance matching circuit is coupled to an electrostatic chuck (ESC). The method further includes determining from the generator output complex V&I a projected complex V&I at a point along a path between an output of a model of the impedance matching circuit and a model of the ESC. The operation of determining of the projected complex V&I is performed using a model for at least part of the path. The method includes applying the projected complex V&I as an input to a function to map the projected complex V&I to a wafer bias value at the ESC model and determining an ion energy from the wafer bias value.

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Fremont, CA, United States of America

John C Valcore, Jr