Fusion Systems Corporation

Fusion Semiconductor Systems

John C Matthews

Michael G Ury

Stuart N Rounds

Charles H Wood

Robert D Wooten

Robert W Couch

David S Ferris

Marshal Greenblatt

A method and apparatus for stripping a photoresist layer from a semiconductor wafer, wherein oxidizing gas is fed from the edge of the wafer to the center. The oxidizing gas may be directed so that it is incident on the heated wafer support platform before it is incident on the wafer.

Method for photoresist stripping using reverse flow

An apparatus for rapidly stripping a photoresist which utilizes an oxidizing fluid such as ozone. A very thin layer of oxidizing fluid of four millimeters or less is flowed over the photoresist. The fluid flows at high velocity over the resist, while the resist is heated. Additionally, the resist may be irradiated with ultraviolet radiation at an irradiance of at least about 800 milliwatts/cm.sup.2.

Apparatus for photoresist stripping

Photoresist is hardened by exposing it to UV radiation while subjecting it to elevated temperatures upon an increase in the degree of polymerization due to exposure to the radiation. The temperature of the photoresist can be controlled by a thermal chuck which contains a thermal ballast of heat conducting material.

Hardening of photoresist

A method and apparatus for performing deep UV photolithography which utilizes a microwave generated electrodeless light source for producing deep UV radiation. This results in faster semiconductor exposure times and less system downtime for changing failed bulbs as well as other advantages which are detailed herein.

Method and apparatus for performing deep UV photolithography

A method and apparatus for providing low gloss and controlled gloss radiation cured coatings, and for effecting on-line control of the degree of gloss provided. A radiation-curable coating of a composition which includes inert particulates is first irradiated with curing radiation of wavelengths to which the coating is responsive but having substantially no distribution beneath about 300 nm, and is subsequently irradiated with curing radiation of wavelengths to which the coating is responsive including substantial radiation at wavelengths beneath 300 nm. Gloss control is obtained by adjusting the spectral distribution, the intensity, or the dose of the initial radiation, or by adjusting the time interval between the initial and subsequent irradiation steps.

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Columbia, MD, United States of America

John C Matthews