Fast Forward Devices, LLC

International Business Machines Corporation

Other

John C Hay, Jr

Barry N Lucas

Jeffrey Curtis Hedrick

Daniel C Edelstein

Christopher Vincent Jahnes

Vincent James McGahay

Kang-Wook Lee

Eric Gerhard Liniger

Charles Robert Davis

Henry Atkinson Nye, Iii

Eva Erika Simonyi

Andrew Robert Eckert

The invention determines density of a sample while the sample is immersed in a gaseous medium having variable density. The apparatus includes a chamber for containing the gaseous medium and the sample, means for selectively varying the density of the gaseous medium over a range of densities, and means for producing electrical signals related to the density of the gaseous medium. In the chamber is a balance beam having a sample pan at a first end and a coil assembly at an opposing second end. Also at the second end of the beam is a first counter-weight having a volume and mass which is substantially equivalent to the volume and mass of sample pan, and which creates a moment that is substantially equivalent to the moment created by the sample pan. At the first end of the beam is a second counter-weight having a volume and mass which is substantially equivalent to the volume and mass of the coil assembly, and which creates a moment which is substantially equivalent to the moment created by the coil assembly. A magnet assembly is disposed adjacent to and magnetically interacts with the coil assembly. A controller provides a coil current to the coil assembly, thereby generating a magnetic field which interacts with the magnet assembly. According to the invention, the interaction between the magnetic field of the coil assembly and the magnet assembly applies a force to the second end of the beam to keep the beam balanced as the density of the gaseous medium in the chamber is varied over the range of densities. A computing device receives the electrical signals related to the density of the gaseous medium and the electrical signal related to the coil current, and calculates the density of the sample based thereon.

Method and apparatus for measuring physical properties of matter

The invention provides a method and apparatus for determining a relationship between hydrostatic stress and volumetric strain in a sample of compressible material, where the sample is immersed in a fluid medium having a density. The method includes steps of varying the hydrostatic stress on the sample by changing the density of the fluid medium over a range of densities, determining a change in apparent weight of the sample as the density of the fluid medium is changed, and determining the volumetric strain in the sample based on the change in apparent weight of the sample and the change in density of the fluid medium.

A multidimensional surface mechanics measurement system applies forces to a surface while minimizing coupling between the forces so applied. The system includes first, second, and third elongate members, a coupler for coupling the elongate members together, and a probe connected to the coupler having a contact point for contacting the surface. The first elongate member extends in a first axial direction that is substantially normal to the surface, the second elongate member extends in a second axial direction that is substantially orthogonal to the first axial direction, and the third elongate member extends in a third axial direction that is substantially orthogonal to the first and second axial directions. Desired relationships between the free length and diameter, and between the axial stiffness and transverse stiffness, and the orthogonal relative positioning of the elongate members, minimizes cross-talk between the measurement axes while maintaining the necessary structural rigidity.

Multidimensional contact mechanics measurement system

Apparatus for measuring physical properties of matter

A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.

Hybrid dielectric structure for improving the stiffness of back end of the line structures

A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90&deg; C. or above so as to provide a surface containing Si&mdash;O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si&mdash;O bonds.

Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density

Growing community of inventors

Knoxville, TN, United States of America

John C Hay, Jr