Applied Materials, Inc.

Springworks, LLC

John C Egermeier

Xin Sheng Guo

Mark A Mueller

Richard Ernest Demaray

Charles N Dornfest

Kai-An Wang

Ravi Mullapudi

Qing Zhu

Nitin Khurana

Hongmei Zhang

Harold D Ackler

Rajiv Pethe

Seh Kwang Lee

An as-deposited waveguide structure is formed by a vapor deposition process without etching of core material. A planar optical device of a lighthouse design includes a ridge-structured lower cladding layer of a low refractive index material. The lower cladding layer has a planar portion and a ridge portion extending above the planar portion. A core layer of a core material having a higher refractive index than the low refractive index material of the lower cladding layer overlies the top of the ridge portion of the lower cladding. A slab layer of the core material overlies the planar portion of the lower cladding layer. The lighthouse waveguide also includes a top cladding layer of a material having a lower refractive index than the core material, overlying the core layer and the slab layer. A method of forming an as-deposited waveguide structure includes first forming a ridge structure in a layer of low refractive index material to provide a lower cladding layer. Next a layer of core material is deposited over the ridge structure by a vapor deposition process. Finally, a top cladding layer of a material having a lower refractive index than the core material is deposited over the core layer.

As-deposited planar optical waveguides with low scattering loss and methods for their manufacture

The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.

Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes

A method and apparatus for detecting target misalignment and plasma instability in a sputtering chamber in a semiconductor fabrication system is provided. In certain embodiments, a detector is utilized to monitor the voltage of the power applied to bias the target. If the voltage fluctuates excessively, plasma instability and target misalignment is indicated.

Target misalignment detector

The present invention provides techniques for processing effluent gases from vacuum fabrication processes. The effluent gases are condensed on cold surfaces (,and,) inside a novel pump (,) resulting in a high vacuum. The pump (,) can be connected to a vacuum fabrication processing chamber (,) and to a turbo molecular pump (,). The condensate which is formed on the cold surfaces of the pump (,) is subsequently evaporated to form regenerated gases during the regeneration of the pump. A pressure vessel (,) is removably connected to the pump during regeneration, causing the regenerated gases to fill the pump and the pressure vessel at pressures ranging from about 10,343 torr (200 psi) to about 103,430 torr ( 2,000 psi). The pressure vessel is closed when substantially all condensate has evaporated. The vessel containing regenerated gases can then be connected to an on-site or to a remote gas treatment facility for removal of noxious substances. In an additional embodiment, an effluent gas processing system (,) is provided, including a controller (,) which is adapted for interacting with a plurality of unit operations (,and,) of the novel gas processing techniques.

Gas processing techniques

A novel method of in-situ cleaning a Ti target in a Ti+TiN anti-reflective coating process when such Ti and TiN deposition process are conducted in the same process chamber by the addition of a simple process step and without the use of a shutter.

Article formed by in-situ cleaning a Ti target in a Ti+TiN coating

Method for in-situ cleaning a Ti target in a Ti + TiN coating process

Growing community of inventors

San Jose, CA, United States of America

John C Egermeier