Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Evonik Degussa Gmbh

Marsella, John A.

John Anthony Marsella

Kevin Rodney Lassila

Xiaobo Shi

Hongjun Zhou

Jo-Ann Theresa Schwartz

James Allen Schlueter

Daniel Hernandez Castillo, Ii

John Edward Quincy Hughes

Jae Ouk Choo

Laura Ledenbach

Saifi Usmani

Martin Kamau Ngigi Mungai

William Edward Starner

Guido Peter Pez

Richard S Myers

Steven Charles Winchester

Steve Charles Winchester

Gamini Ananda Vedage

David A Roberts

Kristen Elaine Minnich

Richard Van Carr

Reinaldo Mario Machado

Aiping Wu

Atteye Houssein Abdourazak

Robert E Stevens

Richard Van Court Carr

Robert L Fowlkes

Thomas John Markley

Anne M Coughlin

Lloyd Gerald Easterday

Gamini Amanda Vedage

Laura Lede Nbach

Ii Daniel Hernandez Castillo

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

The present invention discloses both amine compositions and amine-epoxy compositions containing N,N'-dimethyl-meta-xylylenediamine. A novel process for producing amines such as N,N&#x2032;-dimethyl-meta-xylylenediamine, and structurally similar amines, is also disclosed.

Curing agent for low temperature cure applications

The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65&#xb0; C. and in contact times under three minutes, allowing high throughput on single wafer tools.

Composition and method for photoresist removal

Disclosed herein is a fluorinated bridged carbocyclic compound that can be polymerized by itself or with at least one other ethylenically unsaturated monomer to provide a polymer. The polymer may be used, for example, within a sub-300 nm photoresist composition. Also disclosed is a method to make the bridged carbocyclic compound.

Bridged carbocyclic compounds and methods of making and using same

A prewetted cleaning wipe for cleaning surfaces and having low volatile organic chemical and low nonvolatile residue properties comprising a wipe substrate wetted with an aqueous solution of high purity water and an effective amount of an acetylenic alcohol surface active agent. The surface active agent is preferably an acetylenic diol. Preferred acetylenic diols include dimethyl octynediol and tetramethyl decynediol.

Low VOC cleanroom cleaning wipe

Alkylformamide surfactants

This invention provides water-based compositions, particularly coating, ink, adhesive, fountain solution, agricultural and photoresist developer compositions, manifesting reduced equilibrium and dynamic surface tension by the incorporation of a surface tension reducing amount of certain trialkyl urea compounds of the structure

Surface tension reduction with N,N,N'-trialkkyl ureas

This invention provides water-based compositions, particularly coating, ink, and agricultural compositions, manifesting reduced equilibrium and dynamic surface tension by the incorporation of a surface tension reducing amount of certain cyclic urea compounds of the structure

Cyclic urea surfactants

This invention provides water-based photoresist developer/electronics cleaning compositions manifesting reduced equilibrium and dynamic surface tension by the incorporation as surfactant of an effective amount of certain cyclic urea compounds of the structure

Cyclic ureas in photoresist developers

This invention provides water-based photoresist developer/electronics cleaning compositions manifesting reduced equilibrium and dynamic surface tension by the incorporation as surfactant of an effective amount of certain N,N-dialkyl urea compounds of the structure where R and R' are independently C1 to C6 alkyl or cycloalkyl with the sum of the carbon atoms in both R and R' being 6 to 12.

Use of N,N-dialkyl ureas in photoresist developers

N,N'-dialkylurea and an .alpha.,.beta.-unsaturated nitrile are reacted to form a cyclic N,N'-dialkylurea containing an imine group on a ring carbon. This compound is useful as an intermediate in the formation of N,N'-dialkylpropyleneureas by hydrogenation followed by hydrogenolysis to remove the imine group. Using N,N'-dimethylurea and acrylonitrile as the starting materials one can arrive at N,N'-dimethylpropyleneurea which is a compound useful as an organic solvent and known by its acronym, DMPU.

Process for the production of cyclic N,N'-dialkylureas

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Allentown, PA, United States of America

John Anthony Marsella