Carl Zeiss Smt Gmbh

Carl-Zeiss-Smt Ag

Johannes Zellner

Hans-Juergen Mann

Wilhelm Ulrich

Aurelian Dodoc

Martin Endres

Armin Schoeppach

Marco Pretorius

Timo Laufer

Christoph Menke

David R Shafer

Heiko Feldmann

Norbert Wabra

Udo Dinger

Daniel Kraehmer

Boris Bittner

Hans-Juergen Rostalski

Ulrich Loering

Guenter Rudolph

Hans-Jürgen Mann

Sonja Schneider

Ricarda Schoemer

Holger Walter

Holger Kierey

Bryce Anton Moffat

Gerhard Fuerter

Martin Von Hodenberg

Frank Eisert

Martin Lowisch

Alexander Gratzke

Stefan Koehler

Jean-Noel Fehr

Andreas Ochse

Arne Schob

Claus Zahlten

An EUV collector serves for use in an EUV projection exposure apparatus. The collector guides EUV used light emitted by a plasma source region. An overall impingement surface of the collector is impinged upon by radiation emitted by the plasma source region. A used light portion of the overall impingement surface guides the EUV used light. An extraneous light portion of the overall impingement surface is impinged upon by extraneous light radiation, the wavelength of which differs from that of the used light. The used light portion and the extraneous light portion are not congruent. This EUV collector has increased efficiency can involve reduced production costs.

EUV collector for use in an EUV projection exposure apparatus

A projection objective of a microlithographic projection exposure apparatus includes a wavefront correction device including a refractive optical element that has two opposite optical surfaces, through which projection light passes, and a circumferential rim surface extending between the two optical surfaces. A first and a second optical system are configured to direct first and second heating light to different portions of the rim surface such that at least a portion of the first and second heating light enters the refractive optical element. A temperature distribution caused by a partial absorption of the heating light results in a refractive index distribution inside the refractive optical element that corrects a wavefront error. At least the first optical system includes a focusing optical element that focuses the first heating light in a focal area such that the first heating light emerging from the focal area impinges on the rim surface.

Projection objective of a microlithographic projection exposure apparatus

A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (d) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (d) is smaller than 2.

Projection objective for microlithography

An imaging optical system includes a plurality of mirrors configured to image an object field in an object plane of the imaging optical system into an image field in an image plane of the imaging optical system. An illumination system includes such an imaging optical system. The transmission losses of the illumination system are relatively low.

Microlithographic imaging optical system including multiple mirrors

An imaging optical system has a plurality of mirrors, which image an object field in an object plane into an image field in an image plane. A reflection face of at least one of the mirrors is configured as a free form face which cannot be described by a rotationally symmetrical function. The object field has an aspect ratio greater than 1. A ratio of a minimal and a maximal transverse dimension of the object field can be less than 0.9.

Imaging optical system and illumination optical system

Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.

Imaging optics and projection exposure installation for microlithography with an imaging optics

The disclosure relates a projection objective for imaging an object field in an object plane into an image field in an image plane. The disclosure also relates to a microlithographic projection exposure apparatus including such a projection objective. The disclosure further relates to methods of using such a projection exposure apparatus to fabricate microstructured or nanostructured components, such as highly integrated semiconductor components. In addition, the disclosure relates to components fabricated by such methods.

Projection objective

The disclosure relates an illumination system configured to guide illumination light from a radiation source to an object plane and to provide defined illumination of an object field in the object plane, wherein illumination light is supplied to the object field by a bundle-guiding optical pupil component which is disposed in a pupil plane of the projection objective, and wherein at least another bundle-guiding component is disposed upstream of the pupil component in the beam path of the illumination light. The disclosure further concerns a projection exposure apparatus that includes such an illumination system of this type, a method of fabricating a microstructured component using such a projection exposure apparatus, and a microstructured component fabricated using such a method.

Illumination system and microlithographic projection exposure apparatus including same

The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

Symmetrical objective having four lens groups for microlithography

A projection objectivefor short wavelengths, in particular for wavelengths &#x3bb;&#x3c;157 nm is provided with a number of mirrors [MMMMMand Mthat are arranged positioned precisely in relation to an optical axisThe mirrors [MMMMMand Mhave multilayer coatings. At least two different mirror materials are provided which differ in the rise in the coefficient of thermal expansion as a function of temperature in the region of the zero crossing of the coefficients of thermal expansion, in particular in the sign of the size.

There is provided an optical component. The optical component includes a material having a coefficient of thermal expansion &#x3b1;, where the coefficient of thermal expansion is dependent on location. The following applies to the location-dependent coefficient of thermal expansion:&#x3b1;=&#xb1;&#x394;&#x3b1;,  

Optical component, comprising a material with a predetermined homogeneity of thermal expansion

A projection exposure apparatus for transferring an image of a patterned reticle onto a substrate comprises an illumination optical system for generating and directing an exposure beam onto the reticle, and a projection optical system provided between the reticle and the substrate. The projection optical system has a plurality of imaging mirrors each having a mirror support made of a support material. The support materials are subject to thermal expansion during projection that induces imaging aberrations at substrate level. The support materials are selected such that an aberration merit function, which is indicative of the overall amount of at least one type of the thermally induced aberrations, is minimized by mutual compensation of contributions of the mirrors to the one type of thermally induced aberrations. As a result, the mirror supports will then generally be different and have, when heated during exposure, different coefficients of thermal expansion.

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Aalen, Germany

Johannes Zellner