Carl Zeiss Smt Gmbh

Johannes Schöneberg

Christof Baur

Michael Budach

Jens Oster

A method, a device and a computer program for repairing a defect of a mask for lithography, in particular an EUV mask, are described. A method of repairing a defect of a mask for lithography, in particular an EUV mask, comprises the following steps: (a.) carrying out a first repair step on the defect using a first repair dose, wherein the defect transitions from an initial topology to a first defect topology as a result; (b.) determining an influence of the first repair step on the topology of the defect; (c.) determining a second defect topology for the defect, which is intended to be achieved by way of a second repair step on the defect; and (d.) determining a second repair dose for the second repair step, at least in part on the basis of the determined influence of the first repair step on the topology of the defect and the second defect topology. The method may further comprise step (e.) of carrying out the second repair step using the second repair dose.

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Darmstadt, Germany

Johannes Schöneberg