Asml Netherlands B.v.

Asml Holding N.v.

Johannes Onvlee

Pieter Willem Herman De Jager

Christopher Charles Ward

Erwin John Van Zwet

Daniel Nathan Burbank

Daniel Nicholas Galburt

Frank Johannes Jacobus Van Boxtel

Norbertus Josephus Martinus Van Den Nieuwelaar

Mark Josef Schuster

Peter A Delmastro

Vadim Yevgenyevich Banine

Samir A Nayfeh

Reinder Teun Plug

Earl William Ebert

Abdullah Alikhan

Justin Matthew Verdirame

Erik Roelof Loopstra

Cheng-Qun Gui

Suzan Leonie Auer-Jongepier

Roel Boumen

Erik Christiaan Fritz

Antonius Franciscus Johannes De Groot

Jozef Petrus Henricus Benschop

David Ferdinand Vles

Laurentius Johannes Adrianus Van Bokhoven

Peter Ferdinand Greve

Dirk-Jan Bijvoet

Raimond Visser

Johannes Hendrikus Gertrudis Franssen

Franciscus Van De Mast

Hubert Marie Segers

Johan Christiaan Gerard Hoefnagels

Wim Symens

Robert Jozef Dumont

Jacobus Eelkman Rooda

Thomas Venturino

Arno Jan Bleeker

Sander Frederik Wuister

Marcel Mathijs Theodore Marie Dierichs

Franciscus Godefridus Casper Bijnen

Herman Vogel

Henricus Wilhelmus Maria Van Buel

Jan Steven Christiaan Westerlaken

Bearrach Moest

Lucas Henricus Johannes Stevens

Robert-Han Munnig Schmidt

Jan Frederik Hoogkamp

Willem Herman Gertruda Anna Koenen

Koen Cuypers

Petrus Rutgerus Bartray

Marinus Jan Remie

Jacques Cor Johan Van Der Donck

Pieter Renaat Maria Hennus

Michiel Peter Oderwald

Paul Jacques Van Wijnen

Aage Bendiksen

Jean-Philippe Xavier Van Damme

Robertus Nicodemus Jacobus Van Ballegoij

Bart Dinand Paarhuis

Remi Daniel Marie Edart

Rudy Jan Maria Pellens

Pieter Johannes Marius Van Groos

Oleg Voznyi

Albert Jan Hendrik Klomp

Keith Frank Best

Michal Emanuel Pawlowski

Nikolay Nikolaevich Iosad

Geoffrey Alan Schultz

Adrianus Martinus Van Der Wielen

Pascale Anne Maury

Cornelis Melchior Brouwer

Kevin Van De Ruit

Christopher Michael Dohan

Pieter De Jager

Santiago E Delpuerto

Bernardus A J Luttikhuis

Henricus Petrus Johannes Van Lierop

Augustinus Hubert Maria Boshouwers

Michiel Antal Rogier Stoets

David Christopher Christopher Ockwell

Erwin Theodorus Jacoba Verhagen

Henricus Petrus Johannus Van Lierop

Marcelo Henrique De Andrade Oliveira

Chattarbir Singh

Henricus Anita Jozef Wilhemus Van De Ven

Arnaud Hubaux

José Nilton Fonseca Junior

Hendrik De Man

Erik Fritz

An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a broadband beam and illuminates surface of an object with the broadband illumination beam. The broadband beam has a continuous spectral range. The detection system receives radiation scattered at the surface and by a structure near the surface. The detection system generates a detection signal based on an optical response to the broadband illumination beam. The processing circuitry analyzes the detection signal. The processing circuitry distinguishes between a spurious signal and a signal corresponding to a defect on the surface based on the analyzing. The spurious signal is diminished for at least a portion of the continuous spectral range.

Contaminant analyzing metrology system, lithographic apparatus, and methods thereof

A substrate support for supporting a substrate. The substrate support includes a main body, a clamping device and a dither device. The main body includes a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate is being loaded onto the support surface.

Substrate support, lithographic apparatus and loading method

A method for configuring a semiconductor manufacturing process, the method including: providing an initial prediction model including a plurality of model parameters to one or more remote locations; receiving at least one updated model parameter from the one or more remote locations, the at least one model parameter is updated by training the initial prediction model with local data at the one or more remote locations; determining aggregated model parameters based on the at least one updated model parameter received from the one or more remote locations; and adjusting the initial prediction model based on the aggregated model parameters, the adjusted prediction model being operable to configure the semiconductor manufacturing process.

Systems and methods for adjusting prediction models between facility locations

A substrate support for supporting a substrate. The substrate support comprises a main body, a clamping device and a dither device. The main body comprises a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate W is being loaded onto the support surface.

A lithographic apparatus including a support to support a patterning device, a substrate table to hold a substrate, and a projection system to project a radiation beam patterned by the patterning device onto a target portion of the substrate. A transparent layer is provided to protect the pattering device. The apparatus further includes a transparent layer deformation-determining device to determine a deformation profile of the transparent layer, the deformation profile of the transparent layer expressing a deformation of the transparent layer during a scanning movement of the lithographic apparatus, and a compensator device which is configured to control the projection system, the substrate table and/or the support in response to the deformation profile of the transparent layer to compensate for the deformation of the transparent layer during the scanning movement of the apparatus.

Lithographic apparatus and lithographic projection method

A target structure such as an alignment mark on a semiconductor substrate becomes obscured by an opaque layer so that it cannot be located by an alignment sensor. A position for the mark is determined using an edge position sensor and relative position information that defines the position of the mark relative to one or more edge portions of the substrate is stored prior to formation of the opaque layer. A window can be opened in the opaque layer, based on the determined position. After revealing the target structure, the alignment sensor can, if desired, measure more accurately the position of the target structure, for use in controlling a further lithographic step. The edge position sensor may be a camera having an angle-selective behavior. The edge position sensor may be integrated within the alignment sensor hardware.

Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate

An apparatus, system, and method cool a patterning device by supplying a non-uniform gas flow. The apparatus and system include a gas supply structure that supplies a gas flow across the first surface of the patterning device. The gas supply structure includes a gas supply nozzle specially configured to create a non-uniform gas flow distribution. A greater volume or velocity of the gas flow is directed to desired portion of the patterning device.

Reticle cooling by non-uniform gas flow

A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate () positioned between the movable stage () and the projection system (). The plate includes an opening () that comprises a first sidewall () and a second sidewall (). The plate may be configured to provide a gas flow pattern () in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.

Gas flow optimization in reticle stage environment

A patterning device support for controlling a temperature of a patterning device can include a movable component. The movable component can include a gas inlet for supplying a gas flow across a surface of the patterning device and a gas outlet for extracting the gas flow. The patterning device support can also include a gas flow generator coupled to a duct, for recirculating the gas flow from the gas outlet to the gas inlet.

Patterning device support, lithographic apparatus, and method of controlling patterning device temperature

A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

Estimating deformation of a patterning device and/or a change in its position

A substrate handling apparatus for handling a substrate is disclosed. The substrate handling apparatus includes a substrate feeding device to feed the substrate towards an exposure area, a substrate receiving device to receive the substrate from the exposure area, and a substrate stabilization device to maintain, at least in the exposure area, the substrate substantially flat at an exposure height and/or tilt, the substrate stabilization device configured for contactless stabilization of the flexible substrate.

Substrate handling apparatus and lithographic apparatus

In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator includes a deflector to displace the plurality of beams with respect to an exposure area.

Lithographic apparatus, programmable patterning device and lithographic method

A patterning device support () for controlling a temperature of a patterning device () can include a movable component (). The movable component can include a gas inlet () for supplying a gas flow across a surface of the patterning device and a gas outlet () for extracting the gas flow. The patterning device support can also include a gas flow generator () coupled to a duct () for recirculating the gas flow from the gas outlet to the gas inlet.

A system for controlling temperature of a patterning device in a lithographic apparatus is discussed. The system includes a patterning device support configured to support a patterning device and a reticle cooling system configured to provide substantially uniform temperature distribution across the patterning device. The reticle cooling system includes a first and second array of gas inlets configured to provide a first and second gas flow along a first and second direction across a surface of the patterning device, respectively, where first and second directions are opposite to each other. The reticle cooling system further includes a switching control system configured to control operation of the first and second arrays of gas inlets.

Reticle cooling system in a lithographic apparatus

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's-Hertogenbosch, Netherlands

Johannes Onvlee