Infineon Technologies Ag

Johannes Kowalewski

Henning Haffner

Werner Graf

Lars Heineck

Hans-Georg Fröhlich

Heike Langnickel

Antje Lässig

Udo Götschkes

Reiner Trinowitz

Frank Hübinger

Gerd Krause

The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.

Method for production of contacts on a wafer

A mark configuration for the alignment and/or determination of a relative position of at least two planes in relation to one another in a substrate and/or in layers on a substrate during lithographic exposure, in particular, in the case of a wafer during the production of DRAMs, includes a mark structure, and at least one layer of a definable thickness underneath the mark structure for adjusting the physical position of the mark structure relative to a reference plane in or on the substrate. Also provided is a wafer having such a configuration and a process for providing such a configuration. The invention allows a mark configuration to have mark structures exhibiting good contrast regardless of the design or the process conditions.

Mark configuration, wafer with at least one mark configuration, and a method of producing at least one mark configuration

Growing community of inventors

Dresden, Germany

Johannes Kowalewski